Optical fibre micromechanical pressure sensor with very low temperature cross-sensitivity

1994 ◽  
Author(s):  
Seshadri Ramakrishnan ◽  
Heinrich A. Hoefler
Keyword(s):  
Low Temperature ◽  
Optical Fibre ◽  
Pressure Sensor ◽  
Cross Sensitivity ◽  
Very Low Temperature

Optical Interferometric Pressure Sensor Based on a Buckled Beam With Low-Temperature Cross-Sensitivity

2018 ◽  
Vol 67 (4) ◽  
pp. 950-955 ◽  
Author(s):  
Chen Zhu ◽  
Yizheng Chen ◽  
Yiyang Zhuang ◽  
Guozhong Fang ◽  
Xuefeng Liu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Pressure Sensor ◽  
Cross Sensitivity ◽  
Buckled Beam

RESISTIVITY OF TmSe UNDER PRESSURE AT VERY LOW TEMPERATURE

1980 ◽  
Vol 41 (C5) ◽  
pp. C5-177-C5-180
Author(s):  
J. Flouquet ◽  
P. Haen ◽  
F. Holtzberg ◽  
F. Lapierre ◽  
J. M. Mignot ◽  
...  
Keyword(s):  
Low Temperature ◽  
Very Low Temperature

Can fluorosyl hydride be formed or even prepared?

1990 ◽  
Vol 55 (4) ◽  
pp. 890-895
Author(s):  
Rudolf Zahradník ◽  
B. Andes Hess
Keyword(s):  
Low Temperature ◽  
Quantum Chemical Calculations ◽  
Quantum Chemical ◽  
Solid Matrix ◽  
Vibrational Characteristics ◽  
Very Low Temperature

HFO and HClO (fluorosyl and chlorosyl hydrides) and isomeric molecules HOF and HOCl (hypofluorous and hypochlorous acids) have been studied theoretically. On the basis of nonempiracal quantum chemical calculations (MP2, MP4 and CCD/6-311G**) geometry, energy and vibrational characteristics are analyzed and it is concluded that there is a poor chance to observe formation of HFO. Possibly, bombardment of HF in a solid matrix by 16O could lead at very low temperature to HFO.

scholarly journals Silver‐Promoted High‐Performance (Ag,Cu)(In,Ga)Se 2 Thin‐Film Solar Cells Grown at Very Low Temperature

Solar RRL ◽  
2021 ◽  
pp. 2100108
Author(s):  
Shih-Chi Yang ◽  
Jordi Sastre ◽  
Maximilian Krause ◽  
Xiaoxiao Sun ◽  
Ramis Hertwig ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Solar Cells ◽  
Very Low Temperature

scholarly journals Thermal Conductivity through the Quantum Critical Point inYbRh2Si2at Very Low Temperature

2015 ◽  
Vol 115 (4) ◽  
Author(s):  
M. Taupin ◽  
G. Knebel ◽  
T. D. Matsuda ◽  
G. Lapertot ◽  
Y. Machida ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Low Temperature ◽  
Critical Point ◽  
Quantum Critical Point ◽  
Quantum Critical ◽  
Very Low Temperature

Design of Ultra Low Temperature Pressure and Temperature Sensor Structure

2011 ◽  
Vol 80-81 ◽  
pp. 693-697
Author(s):  
Chang Hong Ji ◽  
Bin Zhen Zhang ◽  
Jian Zhang ◽  
Xiang Hong Li ◽  
Jian Lin Liu
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Pressure Sensor ◽  
Temperature Sensor ◽  
Elastic Membrane ◽  
Temperature Influence ◽  
Sensor Sensitivity ◽  
Piezoresistive Pressure Sensor ◽  
Sensor Structure

In order to measure the pressure in the ultra-low temperature condition, the structure of ultra-low temperature piezoresistive pressure sensor is designed. Polysilicon nanometer thin film is used as a varistor according to its temperature and piezoresistive characteristics. The effect of the dimensions of silicon elastic membrane for the sensor sensitivity and the strain dimensions of the elastic membrane are analyzed, then layout position of resistances is arranged. The package structure of pressure sensor is designed. Meanwhile, a low-temperature sensor is designed to compensate the temperature influence to the pressure sensor.

scholarly journals Performance of a MFS-based mosfet for low temperature applications

2005 ◽  
Vol 3 (01) ◽  
Author(s):  
P.J. Garcí­a-Ramí­rez ◽  
F. Sandoval-Ibarra
Keyword(s):  
Low Temperature ◽  
Magnetic Fields ◽  
Power Consumption ◽  
Wide Temperature Range ◽  
Carrier Mobility ◽  
Charge Carriers ◽  
Low Power Consumption ◽  
Current Line ◽  
Key Parameter ◽  
Very Low Temperature

A split-drain MAGFET has been designed for detecting magnetic fields at very low temperature. In this design a key parameter is the Hall angle, which indicates the current line deviation due to the Lorentz force acting on the charge carriers. It is well known that reducing the work temperature the carrier mobility increases, therefore an increase in carrier deflection is expected. As a consequence the split-drain MAGFET is able to detect magnetic fields below 1mT at 77K with low power consumption. Experimental results of a wide temperature range (20K< T

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