Cooled-CCD and amorphous silicon-based neutron imaging systems for low-fluence neutron sources

Author(s):  
Richard C. Lanza ◽  
Eric W. McFarland ◽  
Shuanghe Shi
2001 ◽  
Vol 664 ◽  
Author(s):  
D. Caputo ◽  
G. de Cesare ◽  
F. Lemmi ◽  
A. Nascetti ◽  
F. Palma ◽  
...  

ABSTRACTAmorphous silicon-based phototransistors are studied as an alternative solution to replace pixel-level amplifiers simplifying large-area imaging systems. We report electrical characterization by means of current-voltage and capacitance measurements. The measured capacitance increases with decreasing frequency of the probe signal and values largely exceeding the geometrical one at low frequencies have been achieved both in the dark and under illumination. In particular, values in excess of 200 μF/cm2 are measured under 220 μW/cm2 illumination at 600 nm at 100 mHz. The capacitance dependence on frequency is interpreted in terms of trapping and release kinetics processes in the base and of the gain of the device.


1996 ◽  
Vol 43 (3) ◽  
pp. 1347-1351 ◽  
Author(s):  
R.C. Lanza ◽  
S. Shi ◽  
E.W. McFarland

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.


2009 ◽  
Vol E92-C (5) ◽  
pp. 708-712
Author(s):  
Dong-Heon HA ◽  
Chi Ho HWANG ◽  
Yong Soo LEE ◽  
Hee Chul LEE

2021 ◽  
Vol 118 (26) ◽  
pp. 263507
Author(s):  
Yanyun Ren ◽  
Xiaojing Fu ◽  
Zhi Yang ◽  
Ruoyao Sun ◽  
Ya Lin ◽  
...  

2002 ◽  
Vol 299-302 ◽  
pp. 1267-1271
Author(s):  
C.M Fortmann ◽  
A.H Mahan ◽  
N Hata

2008 ◽  
Author(s):  
T. Schimert ◽  
J. Brady ◽  
T. Fagan ◽  
M. Taylor ◽  
W. McCardel ◽  
...  

2001 ◽  
Vol 66 (1-4) ◽  
pp. 107-115 ◽  
Author(s):  
Yukimi Ichikawa ◽  
Takashi Yoshida ◽  
Toshio Hama ◽  
Hiroshi Sakai ◽  
Kouichi Harashima

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