InAsSb-based mid-infrared lasers (3.8 to 3.9 um) and light-emitting diodes with AlAsSb claddings and semimetal electron injection grown by metal-organic chemical vapor deposition
2002 ◽
Vol 8
(2)
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pp. 298-301
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2010 ◽
2003 ◽
Vol 32
(11)
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pp. 1330-1334
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2007 ◽
Vol 22
(10)
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pp. 1111-1114
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2008 ◽
Vol 47
(4)
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pp. 2954-2956
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1997 ◽
Vol 3
(3)
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pp. 739-748
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