2013 IEEE 5th International Nanoelectronics Conference (INEC)
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158

(FIVE YEARS 0)

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5

(FIVE YEARS 0)

Published By IEEE

9781467348423, 9781467348409, 9781467348416

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Fully CMOS compatible 1T1R integration of vertical nanopillar GAA transistor and Oxide based RRAM cell for high density nonvolatile memory application

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6466006 ◽

2013 ◽

Author(s):

Z. Fang ◽

X. P. Wang ◽

B. B. Weng ◽

Z. X. Chen ◽

A. Kamath ◽

...

Keyword(s):

Nonvolatile Memory ◽

High Density ◽

Cmos Compatible

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The effect of intrinsic defects on resistive switching based on p-n heterojunction

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6466003 ◽

2013 ◽

Author(s):

K. Zheng ◽

X. W. Sun ◽

K. L. Teo

Keyword(s):

Resistive Switching ◽

Intrinsic Defects

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Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressor

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6466020 ◽

2013 ◽

Author(s):

Min-Ru Peng ◽

Mu-Chun Wang ◽

Liang-Ru Ji ◽

Heng-Sheng Huang ◽

Shuang-Yuan Chen ◽

...

Keyword(s):

Hot Carrier ◽

Hot Carrier Effects

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Multiferroic and structural transition properties of Bi1−xPrxFe0.95Mn0.05O3 thin films

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6466016 ◽

2013 ◽

Author(s):

Hone-Zern Chen ◽

Ming-Cheng Kao ◽

San-Lin Young

Keyword(s):

Structural Transition

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Stoichiometric amorphous hydrogenated silicon carbide thin film synthesis using DC-saddle plasma enhanced chemical vapour deposition

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6465984 ◽

2013 ◽

Author(s):

Behzad Jazizadeh Karimi ◽

Ali B. Alamin Dow ◽

Nazir P. Kherani

Keyword(s):

Thin Film ◽

Silicon Carbide ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Hydrogenated Silicon ◽

Amorphous Hydrogenated Silicon ◽

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Technology options for reducing contact resistances in nanoscale metal-oxide-semiconductor field-effect transistors

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6465975 ◽

2013 ◽

Author(s):

Yee-Chia Yeo

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Investigation of rock-salt CrTe thin film grown by molecular beam epitaxy toward half-metal

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6465952 ◽

2013 ◽

Author(s):

Lu Hui ◽

Teo Kie Leong

Keyword(s):

Thin Film ◽

Molecular Beam Epitaxy ◽

Rock Salt ◽

Molecular Beam ◽

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SOI CMOS integrated zinc oxide nanowire for toluene detection

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6465972 ◽

2013 ◽

Author(s):

S. Santra ◽

P. K. Guha ◽

S. K. Ray ◽

F. Udrea ◽

J. W. Gardner

Keyword(s):

Zinc Oxide Nanowire ◽

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The improvement of MOSFET electric characteristics through strain engineering by refilled SiGe as Source and Drain

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6466086 ◽

2013 ◽

Author(s):

Hsin-Chia Yang ◽

Jie-Min Yang ◽

Wen-Shiang Liao ◽

Mu-Chun Wang ◽

Shea-Jue Wang ◽

...

Keyword(s):

Strain Engineering

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Investigation of work function and surface energy of aluminum: An ab-initio study

2013 IEEE 5th International Nanoelectronics Conference (INEC) ◽

10.1109/inec.2013.6466081 ◽

2013 ◽

Author(s):

Shuguang Cheng ◽

Cher Ming Tan ◽

Tianqi Deng ◽

Feifei He ◽

Shuai Zhang ◽

...

Keyword(s):

Surface Energy ◽

Ab Initio ◽

Work Function ◽

Ab Initio Study

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