Growth of polycrystalline hydroxyapatite thin films by pulsed laser deposition and subsequent heat treatment in air

1998 ◽  
Author(s):  
V. D. Nelea ◽  
Cornel Ghica ◽  
C. Martin ◽  
Alexandru Hening ◽  
Ion N. Mihailescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Subsequent Heat Treatment ◽  
Laser Deposition

Fabrication of Electrically Active Si-based Thin Films by Pulsed Laser Deposition of SiO/C Dual Targets

2008 ◽  
Vol 1148 ◽  
Author(s):  
Yusaburo Ono ◽  
Yushi Kato ◽  
Yasuyuki Akita ◽  
Makoto Hosaka ◽  
Naoki Shiraishi ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Si Nanocrystals ◽  
Current Voltage ◽  
Conduction Behavior

AbstractWe investigated the fabrication of Si nanocrystals, including thin films, by annealing the SiO/C/SiO thin films in an Ar atmosphere. The SiO/C/SiO trilayered thin films were deposited on α-Al2O3 (0001), Si (111), or ITO-coated borosilicate glass substrates at room temperature by pulsed laser deposition using dual sintered SiO and graphite targets. The SiO/C/SiO thin films subjected to heat treatment at 500°C included nanocrystalline Si. Measurements by synchrotron radiation X-ray diffraction indicated the formation of Si nanocrystals having a size of 5–10 nm. Fourier transform infrared spectra showed that Si–O stretching and vibrational peak intensities of the as-deposited thin film decreased remarkably after annealing. The C layer in the SiO/C/SiO trilayered thin films is considered to play a role in enhancing the chemical reaction that produces Si nanocrystals through reduction of SiO during heat treatment. The annealed SiO/C-based thin films, including Si nanocrystals, exhibited photosensitive conduction behavior in current–voltage measurements.

Effects of heat treatment on structure of amorphous CNx thin films by pulsed laser deposition

2001 ◽  
Vol 389 (1-2) ◽  
pp. 62-67 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo ◽  
Muneo Sasaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

Preparation and characterization of CuSbSe2 thin films deposited by pulsed laser deposition

2021 ◽  
Vol 127 ◽  
pp. 105716
Author(s):  
Tianzhen Guo ◽  
Dan Wang ◽  
Yajun Yang ◽  
Xiaoyong Xiong ◽  
Kelin Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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