scholarly journals Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge1-xSix/Ge/p-Ge1-xSix quantum well

2002 ◽  
Author(s):  
M. V. Yakunin ◽  
G. A. Alshanskii ◽  
Yu G. Arapov ◽  
V. N. Neverov ◽  
O. A. Kuznetsov
2004 ◽  
Vol 70 (15) ◽  
Author(s):  
R. Fletcher ◽  
T. Smith ◽  
M. Tsaousidou ◽  
P. T. Coleridge ◽  
Z. R. Wasilewski ◽  
...  

JETP Letters ◽  
2011 ◽  
Vol 94 (5) ◽  
pp. 397-400 ◽  
Author(s):  
V. E. Kozlov ◽  
S. I. Gubarev ◽  
I. V. Kukushkin

1988 ◽  
Vol 38 (12) ◽  
pp. 8215-8218 ◽  
Author(s):  
Bodo Huckestein ◽  
Reiner Kümmel

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2938-2942
Author(s):  
K. TAKASHINA ◽  
Y. NIIDA ◽  
V. T. RENARD ◽  
A. FUJIWARA ◽  
T. FUJISAWA ◽  
...  

We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.


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