NEGATIVE MAGNETORESISTANCE OF A SILICON 2DEG UNDER IN-PLANE MAGNETIC FIELD DUE TO SPIN-SPLITTING OF UPPER SUBBANDS

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2938-2942
Author(s):  
K. TAKASHINA ◽  
Y. NIIDA ◽  
V. T. RENARD ◽  
A. FUJIWARA ◽  
T. FUJISAWA ◽  
...  

We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.

2000 ◽  
Vol 61 (3) ◽  
pp. 1712-1715 ◽  
Author(s):  
L. V. Kulik ◽  
I. V. Kukushkin ◽  
V. E. Kirpichev ◽  
K. v. Klitzing ◽  
K. Eberl

1993 ◽  
Vol 07 (01n03) ◽  
pp. 474-479 ◽  
Author(s):  
A. BERG ◽  
D. WEISS ◽  
K. V. KLITZING ◽  
R. NÖTZEL

The spin splitting observed in two-dimensional electron systems at high magnetic fields is not only determined by the single-electron Zeeman energy but also by many-particle effects. Electron-electron interaction results in an enhanced g-factor which can be described by the exchange part of the Coulomb interaction. Nuclear spin lattice relaxation experiments analysing the Overhauser Shift in Electron Spin Resonance (ESR) measurements reveal that the exchange term is dominant. The spin splitting is strongly dependent on magnetic field and temperature. Numerical simulations enable the quantitative determination of the exchange part of the spin split energy. Transport activation measurements verify that the exchange part is proportional to the spin polarization of the electrons.


Sign in / Sign up

Export Citation Format

Share Document