NEGATIVE MAGNETORESISTANCE OF A SILICON 2DEG UNDER IN-PLANE MAGNETIC FIELD DUE TO SPIN-SPLITTING OF UPPER SUBBANDS
2009 ◽
Vol 23
(12n13)
◽
pp. 2938-2942
Keyword(s):
We examine the effect of an in-plane magnetic field on the resistance of a 2-dimensional electron system confined in a silicon quantum well when the Fermi energy is tuned through the upper valley-subband edge while the electrons are otherwise valley-polarized. In contrast to previous experiments on valley-degenerate systems which only showed positive magnetoresistance, when the Fermi energy is at or near the upper valley-subband edge, the magnetoresistance is found to show a distinct negative contribution which is interpreted as being due to spin polarization of the upper valley-subband.
2002 ◽
Vol 57
(2-3)
◽
pp. 11
Keyword(s):
Keyword(s):
1993 ◽
Vol 07
(01n03)
◽
pp. 474-479
◽
Keyword(s):
1990 ◽
Vol 64
(16)
◽
pp. 1959-1962
◽