Polysilicon and amorphous silicon technology comparison for active-matrix liquid-crystal displays

Author(s):  
Richard H. Bruce ◽  
Shinji Morozumi ◽  
Michael G. Hack ◽  
Alan Lewis ◽  
I-Wei Wu



1995 ◽  
Vol 377 ◽  
Author(s):  
H. Gleskova ◽  
S. Wagner ◽  
D. S. Shen

ABSTRACTA novel laser-printing method for the manufacturing of the backplane circuits of active-matrix liquid-crystal displays (AMLCD) is proposed and demonstrated. Xerographic toner is used as an etch mask for amorphous silicon (a-Si:H) and for the seeding of metal lines. We also demonstrate for the first time the direct-print patterning of silicon on ∼ 50 μm thick glass foil.



1987 ◽  
Vol 95 ◽  
Author(s):  
H. Miki ◽  
S. Kawamoto ◽  
T. Horikawa ◽  
T. Maejima ◽  
H. Sakamoto ◽  
...  

AbstractThe preparation and properties of hydrogenated amorphous silicon thin film transistor arrays for active matrix liquid crystal displays are reported. The effect of amorphous silicon film preparation conditions on the field effect mobility of thin film transistors was investigated. The dry etching rate of silicon nitride film was studied.The thin film transistor arrays have 408 ˜ 640 transistors on the first version and 450 ˜ 640 ˜ 3 transistors on the second version. The liquid crystal panel fabricated using the first version arrays showed good characteristics.







2011 ◽  
Vol 78 (7) ◽  
pp. 444 ◽  
Author(s):  
V. A. Bol’shukhin ◽  
V. S. Ilyasov ◽  
N. P. Soshchin ◽  
V. N. Ulasyuk


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