Hydrogenated amorphous silicon germanium black-matrix material for active-matrix liquid-crystal displays

1997 ◽  
Vol 5 (4) ◽  
pp. 393 ◽  
Author(s):  
Hagen Klauk ◽  
Steven L. Wright ◽  
Lauren F. Palmateer ◽  
Suzanne E. Mohney ◽  
Thomas N. Jackson

1990 ◽  
Vol 192 ◽  
Author(s):  
Hideki Matsumura ◽  
Masaaki Yamaguchi ◽  
Kazuo Morigaki

ABSTRACTHydrogenated amorphous silicon-germanium (a-SiGe:H) films are prepared by the catalytic chemical vapor deposition (Cat-CVD) method using a SiH4, GeH4 and H4 gas mixture. Properties of the films are investigated by the photo-thermal deflection spectroscopy (PDS) and electron spin resonance (ESR) measurements, in addition to the photo-conductive and structural studies. It is found that the characteristic energy of Urbach tail, ESR spin density and other photo-conductive properties of Cat-CVD a-SiGe:H films with optical band gaps around 1.45 eV are almost equivalent to those of the device quality glow discharge hydrogenated amorphous silicon (a-Si:H).



1992 ◽  
Author(s):  
Richard H. Bruce ◽  
Shinji Morozumi ◽  
Michael G. Hack ◽  
Alan Lewis ◽  
I-Wei Wu


Author(s):  
F López Huerta ◽  
R M Woo García ◽  
L García González ◽  
A L Herrera May ◽  
W Calleja Arriaga ◽  
...  


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