Advances in OLED-based oxygen sensors with structurally integrated OLED, sensor film, and thin-film Si photodetector

Author(s):  
Debju Ghosh ◽  
Ruth Shinar ◽  
Yuankun Cai ◽  
Zhaoqun Zhou ◽  
Vikram L. Dalal ◽  
...  
Keyword(s):  
2007 ◽  
Vol 989 ◽  
Author(s):  
Debju Ghosh ◽  
Ruth Shinar ◽  
Vikram L. Dalal ◽  
Zhaoqun Zhou ◽  
Joseph Shinar

AbstractRecent efforts to advance photoluminescence (PL)-based oxygen sensors have focused on developing compact, field-deployable devices. This has led to organic light emitting device (OLED)-based sensors with a structurally integrated [OLED excitation source]/[sensing film] module. To additionally integrate a photodetector (PD), PECVD for fabrication of thin-film p-i-n and n-i-p Si- and Si,Ge-based PDs was employed. O2 concentrations are advantageously determined by monitoring the effect of O2 on shortening the PL decay time  of an oxygen-sensitive dye, rather than on quenching its PL intensity. This approach, which employs pulsed OLEDs, eliminates the need for frequent sensor calibration, minimizes issues associated with background light, and eliminates the need for optical filters, which lead to bulkier sensors. However, it requires PDs with response times significantly shorter than . Therefore, the development of thin-film PDs focused on decreasing their response time, and understanding the factors affecting it. In this paper we show that boron diffusion during growth from the p+ to the i layer increases the response time of PECVD grown p-i-n PDs. Incorporating a SiC buffer layer and fabricating superstrate structures, where the p+ layer is grown last, decrease it. Additionally, ECR fabricated PDs show a slower response in comparison to VHF PECVD-grown PDs.


1972 ◽  
Vol 50 (14) ◽  
pp. 1676-1681 ◽  
Author(s):  
Ronald J. Thomas ◽  
Doran J. Baker

Measurements indicate that the initial oxidation rate of a thin film of silver is linearly proportional to the atomic oxygen flux; however, the oxidation coefficient is dependent upon the technique for depositing and chemically reducing the thin film. A model is developed relating the conductance of a thin-film sample to its oxidation. The measurements and the model indicate that the silver film is very promising as a sensor of upper atmospheric atomic oxygen. The model also indicates that the surface recombination coefficient of atomic oxygen depends on the oxide thickness as well as the flux.


2003 ◽  
Vol 212-213 ◽  
pp. 397-401 ◽  
Author(s):  
M Ogita ◽  
S Yuasa ◽  
K Kobayashi ◽  
Y Yamada ◽  
Y Nakanishi ◽  
...  

1996 ◽  
Vol 37 (1-2) ◽  
pp. 83-89 ◽  
Author(s):  
D Rosenfeld ◽  
P.E Schmid ◽  
S Széles ◽  
F Lévy ◽  
V Demarne ◽  
...  

1997 ◽  
Vol 69 (14) ◽  
pp. 2842-2847 ◽  
Author(s):  
Andrew Mills ◽  
Anne Lepre ◽  
Brian R. C. Theobald ◽  
Elizabeth Slade ◽  
Barry A. Murrer

1994 ◽  
Vol 22 (3) ◽  
pp. 189-194 ◽  
Author(s):  
V. Smyntyna ◽  
V. Gerasutenko ◽  
V. Golovanov ◽  
S. Kačiulis ◽  
G. Mattogno ◽  
...  

2011 ◽  
Vol 702 (2) ◽  
pp. 269-273 ◽  
Author(s):  
A. Mills ◽  
C. Tommons ◽  
R.T. Bailey ◽  
P. Crilly ◽  
M.C. Tedford
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