Nonoxidative Coupling of Ethane with Gold loaded Photocatalysts

Direct and continuous conversion of ethane to yield n-butane and hydrogen at near room temperature (ca. 320 K) was examined with gold loaded gallium oxide and titanium dioxide photocatalysts without...

Wet Etching in β-Ga2O3 Bulk Single Crystal

Beta-phase gallium oxide (β-Ga2O3) bulk single crystal has received increasing attentions due to their fantastic performances and widespread use in power devices and solar-blind photodetectors. Wet etching has proved to...

Insulator-to-semiconductor conversion of solution-processed ultra-wide bandgap amorphous gallium oxide via hydrogen annealing

Developing semiconducting solution-processed ultra-wide bandgap (UWB) amorphous oxide semiconductor (AOS) is an emerging area of research interest. However, obtaining electrical conduction on it is quite challenging. Here, we demonstrate the insulator-to-semiconductor conversion of solution-processed a-Ga2Ox (Eg~4.8 eV) through hydrogen annealing. The successful conversion was reflected by the switching thin-film transistor (TFT) with μsat of 10-2 cm2/Vs. We showed that H incorporated after hydrogen annealing acts as a shallow donor which increased the carrier concentration and shifted the EF closer to the CBM.