Directly induced ablation of metal thin films by ultrashort laser pulses

Author(s):  
Gerhard Heise ◽  
Jan Konrad ◽  
Sebastian Sarrach ◽  
Jürgen Sotrop ◽  
Heinz P. Huber

2004 ◽  
Vol 84 (22) ◽  
pp. 4445-4447 ◽  
Author(s):  
S. M. Wiggins ◽  
J. Solis ◽  
C. N. Afonso


2001 ◽  
Vol 89 (12) ◽  
pp. 8247-8252 ◽  
Author(s):  
B. Le Drogoff ◽  
F. Vidal ◽  
Y. von Kaenel ◽  
M. Chaker ◽  
T. W. Johnston ◽  
...  


2012 ◽  
Vol 110 (1) ◽  
pp. 227-233 ◽  
Author(s):  
Dominik Bartl ◽  
Andreas Michalowski ◽  
Margit Hafner ◽  
Andreas Letsch ◽  
Stefan Nolte ◽  
...  


Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1186
Author(s):  
Ayesha Sharif ◽  
Nazar Farid ◽  
Rajani K. Vijayaraghavan ◽  
Patrick J. McNally ◽  
Gerard M. O’Connor

We propose a novel low temperature annealing method for selective crystallization of gold thin films. Our method is based on a non-melt process using highly overlapped ultrashort laser pulses at a fluence below the damage threshold. Three different wavelengths of a femtosecond laser with the fundamental (1030 nm), second (515 nm) and third (343 nm) harmonic are used to crystallize 18-nm and 39-nm thick room temperature deposited gold thin films on a quartz substrate. Comparison of laser wavelengths confirms that improvements in electrical conductivity up to 40% are achievable for 18-nm gold film when treated with the 515-nm laser, and the 343-nm laser was found to be more effective in crystallizing 39-nm gold films with 29% improvement in the crystallinity. A two-temperature model provides an insight into ultrashort laser interactions with gold thin films and predicts that applied fluence was insufficient to cause melting of gold films. The simulation results suggest that non-equilibrium energy transfer between electrons and lattice leads to a solid-state and melt-free crystallization process. The proposed low fluence femtosecond laser processing method offers a possible solution for a melt-free thin film crystallization for wide industrial applications.



2006 ◽  
Vol 252 (13) ◽  
pp. 4814-4818 ◽  
Author(s):  
J. Hermann ◽  
M. Benfarah ◽  
G. Coustillier ◽  
S. Bruneau ◽  
E. Axente ◽  
...  


2016 ◽  
Vol 64 (6) ◽  
pp. 601-608 ◽  
Author(s):  
J. H. Castro-Chacón ◽  
C. Torres-Torres ◽  
A. V. Khomenko ◽  
M. A. García-Zárate ◽  
M. Trejo-Valdez ◽  
...  


Metals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1586
Author(s):  
Byunggi Kim ◽  
Han-Ku Nam ◽  
Young-Jin Kim ◽  
Seung-Woo Kim

Laser ablation of metal thin films draws attention as a fast means of clean micropatterning. In this study, we attempt to remove only the metal thin film layer selectively without leaving thermal damage on the underneath substrate. Specifically, our single-pulse ablation experiment followed by two-temperature analysis explains that selective ablation can be achieved for gold (Au) films of 50–100 nm thickness by the lift-off process induced as a result of vaporization of the titanium (Ti) interlayer with a strong electron–phonon coupling. With increasing the film thickness comparable to the mean free path of electrons (100 nm), the pulse duration has to be taken shorter than 10 ps, as high-temperature electrons generated by the ultrashort pulses transfer heat to the Ti interlayer. We verify the lift-off ablation by implementing millimeters-scale micropatterning of optoelectronic devices without degradation of optical properties.



2012 ◽  
Vol 39 ◽  
pp. 594-602 ◽  
Author(s):  
Shizhou Xiao ◽  
Benjamin Schöps ◽  
Andreas Ostendorf


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