Synthesis and optical properties of CdS quantum dot-embedded silica film for luminescent down-shifting layer

2010 ◽  
Author(s):  
Zhenyi Chen ◽  
Juan Qin ◽  
Xiaoli Zhang ◽  
Min Zhang ◽  
Weimin Shi ◽  
...  
Optik ◽  
2021 ◽  
pp. 167824
Author(s):  
Abdullah Ahmed Ali Ahmed ◽  
Nasim M. Al-Hesni ◽  
Ahmed H. Al-Osta ◽  
Mohammed L. Al-Salmi ◽  
Khlood A. Manssor ◽  
...  

2001 ◽  
Vol 226 (1) ◽  
pp. 219-232 ◽  
Author(s):  
H.E. Por?eanu ◽  
E. Lifshitz ◽  
M. Pflughoefft ◽  
A. Eychm�ller ◽  
H. Weller

2010 ◽  
Vol 494 (1-2) ◽  
pp. L7-L10 ◽  
Author(s):  
Zujun Cheng ◽  
Fenfang Su ◽  
Likun Pan ◽  
Meiling Cao ◽  
Zhuo Sun

2014 ◽  
Vol 53 (6) ◽  
pp. 2261-2269 ◽  
Author(s):  
Jolly Vakayil Antony ◽  
Philip Kurian ◽  
Nampoori Parameswaran Narayanan Vadakkedathu ◽  
George Elias Kochimoolayil

2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.


2002 ◽  
Vol 56 (3) ◽  
pp. 156-160
Author(s):  
Fa-Min Liu ◽  
Tian-Min Wang ◽  
Li-De Zhang

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