MAGNETIC FIELD, PRESSURE AND TEMPERATURE DEPENDENT OPTICAL PROPERTIES IN A GaAs 9.0 P 1.0 QUANTUM DOT

2014 ◽  
Vol 6 (2) ◽  
pp. 1178-1190
Author(s):  
A. JOHN PETER ◽  
Ada Vinolin
Keyword(s):  
Magnetic Field ◽  
Optical Properties ◽  
Quantum Dot ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Photon Energy ◽  
Nonlinear Optical ◽  
Binding Energies ◽  
Nonlinear Optical Properties ◽  
Optical Rectification

Simultaneous effects of magnetic field, pressure and temperature on the exciton binding energies are found in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot. Numerical calculations are carried out taking into consideration of spatial confinement effect. The cylindrical system is taken in the present problem with the strain effects. The electronic properties and the optical properties are found with the combined effects of magnetic field strength, hydrostatic pressure and temperature values. The exciton binding energies and the nonlinear optical properties are carried out taking into consideration of geometrical confinement and the external perturbations.Compact density approach is employed to obtain the nonlinear optical properties. The optical rectification coefficient is obtained with the photon energy in the presence of pressure, temperature and external magnetic field strength. Pressure and temperature dependence on nonlinear optical susceptibilities of generation of second and third order harmonics as a function of incident photon energy are brought out in the influence of magnetic field strength. The result shows that the electronic and nonlinear optical properties are significantly modified by the applications of external perturbations in a 9.0 1.0 6.0 4.0 GaAs P / GaAs P quantum dot.

Magneto-biexciton in a group III–V diluted magnetic quantum dot

2014 ◽  
Vol 28 (27) ◽  
pp. 1450188 ◽  
Author(s):  
D. Lalitha ◽  
A. John Peter ◽  
Chang Woo Lee
Keyword(s):  
Magnetic Field ◽  
Quantum Dot ◽  
Field Strength ◽  
Magnetic Field Strength ◽  
Optical Transition ◽  
Binding Energies ◽  
Mean Field Approximation ◽  
Magnetic Impurities ◽  
Spatial Confinement ◽  
G Factor

Binding energies of biexciton are computed in a GaMnAs / GaAlAs quantum dot with the effects of geometrical confinement, exchange interaction between the charge carrier and the magnetic impurities and the magnetic field. The size dependence of the binding energy of the biexciton in the presence of magnetic field is brought out. The optical transition energy, in the presence of magnetic field strength, is discussed for various magnetic impurities in a GaMn x As quantum dot. Numerical calculations are performed using variational technique. The spin polaronic energy of the biexciton with the effect of spatial confinement is carried out taking into account the mean field approximation in the presence of magnetic field strength. The magnetization of magnetic ion impurities as a function of dot radius is computed in a GaMn 0.02 As quantum dot. The effective g-factor as a function of spatial confinement is found in the GaMnAs quantum dot. The results show that the shift in spin polaron has more influence for the larger dot radius and the nonlinearity to linear behavior of g-factor for a particular dot size is achieved due to the sign reversal of Zeeman splitting.

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