Role of Metal-Oxide Interface in Determining the Spin Polarization of Magnetic Tunnel Junctions

Science ◽  
1999 ◽  
Vol 286 (5439) ◽  
pp. 507-509 ◽  
Author(s):  
Jose Maria De Teresa ◽  
Agnès Barthélémy ◽  
Albert Fert ◽  
Jean Pierre Contour ◽  
François Montaigne ◽  
...  

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal–barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.

2013 ◽  
Vol 275-277 ◽  
pp. 1838-1842
Author(s):  
Feng Cai ◽  
Bo Wu ◽  
Yu Feng ◽  
Ying Chen ◽  
Hong Kuan Yuan ◽  
...  

We investigated the atomic rich and defect effects on the half-metallicity of the full-Heusler alloy Co2MnGe from the first principles. Our results show that both Mn-rich and Co-rich could increase the tunnel magnetoresistance (TMR) of the Co2MnGe/MgO magnetic tunnel junctions (MTJs). As for defect, all of investigated Co, Mn and Ge defect show that the spin polarization at Efand the TMR in the MTJs with Co and Mn defect is significatively decreased except for Ge-defected MTJs.


RSC Advances ◽  
2015 ◽  
Vol 5 (2) ◽  
pp. 1581-1586 ◽  
Author(s):  
Kavita Yadav ◽  
B. R. Mehta ◽  
J. P. Singh

The photoluminescence (PL) properties of Indium Oxide (IO) and In–In2O3 core–shell nanorods have been studied at different temperatures in order to understand the role of metal–oxide interfaces and defects on PL emission.


1985 ◽  
Vol 46 (C4) ◽  
pp. C4-135-C4-140 ◽  
Author(s):  
M. Leseur ◽  
B. Pieraggi

2005 ◽  
Vol 98 (10) ◽  
pp. 103504 ◽  
Author(s):  
J. C. A. Huang ◽  
C. Y. Hsu ◽  
Y. F. Liao ◽  
M. Z. Lin ◽  
C. H. Lee

2007 ◽  
Vol 75 (17) ◽  
Author(s):  
N. N. Beletskii ◽  
G. P. Berman ◽  
A. R. Bishop ◽  
S. A. Borysenko ◽  
V. M. Yakovenko

2006 ◽  
Vol 941 ◽  
Author(s):  
Christian Heiliger ◽  
Peter Zahn ◽  
Ingrid Mertig

ABSTRACTThe influence of the structural properties of the leads of planar tunnel junctions on the tunneling current is investigated by means of ab initio electronic structure calculations. In particular, a NM/Fe/MgO/Fe/NM tunnel junction with non-magnetic (NM) leads and finite Fe spacer layers between the leads and the MgO barrier is discussed. The conductance is calculated as a function of the number of Fe layers. The results show that even one iron layer next to the barrier is sufficient to obtain a high spin polarization and a high TMR ratio. This finding implies that similar results can be expected for tunnel junctions with nonmagnetic and even amorphous leads, if states of Δ1 symmetry are provided.


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