Vacancy tuned thermoelectric properties and high spin filtering performance in graphene/silicene heterostructures

The main contribution of this paper is to study the spin caloritronic effects in defected graphene/silicene nanoribbon (GSNR) junctions. Each step-like GSNR is subjected to the ferromagnetic exchange and local external electric fields, and their responses are determined using the nonequilibrium Green’s function (NEGF) approach. To further study the thermoelectric (TE) properties of the GSNRs, three defect arrangements of divacancies (DVs) are also considered for a larger system, and their responses are re-evaluated. The results demonstrate that the defected GSNRs with the DVs can provide an almost perfect thermal spin filtering effect (SFE), and spin switching. A negative differential thermoelectric resistance (NDTR) effect and high spin polarization efficiency (SPE) larger than 99.99% are obtained. The system with the DV defects can show a large spin-dependent Seebeck coefficient, equal to Ss ⁓ 1.2 mV/K, which is relatively large and acceptable. Appropriate thermal and electronic properties of the GSNRs can also be obtained by tuning up the DV orientation in the device region. Accordingly, the step-like GSNRs can be employed to produce high efficiency spin caloritronic devices with various features in practical applications.

Magnetoelastic interactions and magnetic damping in Co2Fe0.4Mn0.6Si and Co2FeGa0.5Ge0.5 Heusler alloys thin films for spintronic applications

Co2Fe0.4Mn0.6Si (CFMS) and Co2FeGa0.5Ge0.5 (CFGG) Heusler alloys are among the most promising thin film materials for spintronic devices due to a high spin polarization, low magnetic damping and giant/tunneling magnetoresistance ratios. Despite numerous investigations of Heusler alloys magnetic properties performed up to now, magnetoelastic effects in these materials remain not fully understood; due to quite rare studies of correlations between magnetoelastic and other magnetic properties, such as magnetic dissipation or magnetic anisotropy. In this research we have investigated epitaxial CFMS and CFGG Heusler alloys thin films of thickness in the range of 15–50 nm. We have determined the magnetoelastic tensor components and magnetic damping parameters as a function of the magnetic layer thickness. Magnetic damping measurements revealed the existence of non-Gilbert dissipation related contributions, including two-magnon scattering and spin pumping phenomena. Magnetoelastic constant B11 values and the effective magnetic damping parameter αeff values were found to be in the range of − 6 to 30 × 106 erg/cm3 and between 1 and 12 × 10–3, respectively. The values of saturation magnetostriction λS for CFMS Heusler alloy thin films were also obtained using the strain modulated ferromagnetic resonance technique. The correlation between αeff and B11, depending on magnetic layer thickness was determined based on the performed investigations of the above mentioned magnetic properties.

Effects of Organic Material on Magnetoresistance in Electron-doped Double Perovskite

The Curie temperature of electron-doped Sr2FeMoO6 can be optimized significantly due to the band-filling effect, but accompanying an almost absent low-field magnetoresistance (LFMR), which is unfavorable to applications in the magnetoresistive devices operated at room-temperature. Our previous works confirmed that, a remarkable enhanced LFMR was observed in Sr2FeMoO6 by modifying the grain boundary with insulating organic small molecules (glycerin, CH2OHCHOHCH2OH). However, in this work, modifying the grain boundary strength of the La0.5Sr1.5FeMoO6 with the insulating organic macromolecules (oleic acid, CH3(CH2)7CH=CH(CH2)7COOH) or small molecules (glycerin), both of them have negligible functions on the magnetoresistance behavior in La0.5Sr1.5FeMoO6. Contrary to the glycerin-modified Sr2FeMoO6, Sr2FeMoO6/oleic acid composites don’t exhibit an obviously increased magnetoresistance property. Based on the above experimental results and the related works, it is proposed that, maintaining high spin polarization of the carriers at the Fermi level and improving the tunneling process across the grain boundary by using the suitable organic materials are decisive factors for optimizing the magnetoresistance behavior in the similar electron-doped double perovskites.

Simultaneous observation of anti-damping and inverse spin Hall effect in La0.67Sr0.33MnO3/Pt bilayer system

Manganites have shown potential in spintronics because they exhibit high spin polarization. Here, by ferromagnetic resonance we have studied the damping properties of La0:67Sr0:33MnO3/Pt bilayers which are prepared by oxide...

Room temperature near unity spin polarization in 2D Van der Waals heterostructures

The generation and manipulation of spin polarization at room temperature are essential for 2D van der Waals (vdW) materials-based spin-photonic and spintronic applications. However, most of the high degree polarization is achieved at cryogenic temperatures, where the spin-valley polarization lifetime is increased. Here, we report on room temperature high-spin polarization in 2D layers by reducing its carrier lifetime via the construction of vdW heterostructures. A near unity degree of polarization is observed in PbI2 layers with the formation of type-I and type-II band aligned vdW heterostructures with monolayer WS2 and WSe2. We demonstrate that the spin polarization is related to the carrier lifetime and can be manipulated by the layer thickness, temperature, and excitation wavelength. We further elucidate the carrier dynamics and measure the polarization lifetime in these heterostructures. Our work provides a promising approach to achieve room temperature high-spin polarizations, which contribute to spin-photonics applications.