Presence of metal-oxide interface enhanced photoluminescence from In–In2O3 core–shell nanorods

RSC Advances ◽  
2015 ◽  
Vol 5 (2) ◽  
pp. 1581-1586 ◽  
Author(s):  
Kavita Yadav ◽  
B. R. Mehta ◽  
J. P. Singh

The photoluminescence (PL) properties of Indium Oxide (IO) and In–In2O3 core–shell nanorods have been studied at different temperatures in order to understand the role of metal–oxide interfaces and defects on PL emission.

Science ◽  
1999 ◽  
Vol 286 (5439) ◽  
pp. 507-509 ◽  
Author(s):  
Jose Maria De Teresa ◽  
Agnès Barthélémy ◽  
Albert Fert ◽  
Jean Pierre Contour ◽  
François Montaigne ◽  
...  

The role of the metal-oxide interface in determining the spin polarization of electrons tunneling from or into ferromagnetic transition metals in magnetic tunnel junctions is reported. The spin polarization of cobalt in tunnel junctions with an alumina barrier is positive, but it is negative when the barrier is strontium titanate or cerium lanthanite. The results are ascribed to bonding effects at the transition metal–barrier interface. The influence of the electronic structure of metal-oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.


ChemInform ◽  
2015 ◽  
Vol 46 (23) ◽  
pp. no-no
Author(s):  
Jeong Young Park ◽  
L. Robert Baker ◽  
Gabor A. Somorjai

1999 ◽  
Vol 586 ◽  
Author(s):  
Kathleen B. Alexander ◽  
Bruce A. Pint ◽  
Peter F. Tortorelli

ABSTRACTThermally-grown oxide scales on high temperature alloys can provide oxidation protection if they are slow-growing, dense and adherent to the substrate. The factors affecting the integrity of the metal/oxide interface during dynamic oxidation processes are complex and include interfacial segregation, interface morphology, near-interface substrate properties, as well as the development of stresses in the growing oxide scale. Minor additions of reactive elements (RE) to the base metal have been shown to improve the oxidation performance of many high temperature materials. Studies on a variety of alloys have shown that the presence of reactive elements in the alloy affects segregation processes at both the metal/oxide and oxide/oxide interfaces. Whereas segregation to the metal/oxide interface can affect the scale adherence, segregation to the oxide/oxide interfaces in RE-containing systems has been proposed to result in changes in transport mechanisms as well as changes in the scale microstructure itself. High spatial resolution analytical electron microscopy techniques have been used to provide information on the microstructure and microchemistry of the scale and the metal/oxide and oxide/oxide interfaces. In general, in systems which exhibit improved oxidation performance, a consistent set of interfacial segregation phenomena and microstructural features were observed. Examples will be shown from a variety of nickel- and iron-based alumina formers. These kinds of studies, combined with traditional scanning electron microscopy studies of oxide scales can lead to the development of a more complete link between RE doping, interfacial segregation, interfacial/scale microstructure, and oxidation performance.


1999 ◽  
Vol 586 ◽  
Author(s):  
M. Backhaus-Ricoult

ABSTRACTTransition metal-oxide interfaces suffer within their thermodynamic stability range Gibbs' adsorption and show important changes in chemical composition with oxygen activity. As a consequence, specific free interfacial energy and adhesion energy also vary with oxygen activity. Adhesion at a given non-reactive transition metal-oxide interface can then be optimised by establishing the proper oxygen activity during processing or by a post-treatment at the interface.In the present work, the approach of Gibbs' adsorption is extended to crystalline, anisotropic (special) transition metal-oxide interfaces. It is demonstrated that interfacial energy varies with oxygen activity. The variation in energy is studied for different adsorption energies, temperatures and interfacial planes.


2017 ◽  
Vol 122 (2) ◽  
pp. 794-800 ◽  
Author(s):  
Robert M. Palomino ◽  
Pedro J. Ramírez ◽  
Zongyuan Liu ◽  
Rebecca Hamlyn ◽  
Iradwikanari Waluyo ◽  
...  

2016 ◽  
Vol 120 (3) ◽  
pp. 1778-1784 ◽  
Author(s):  
Sanjaya D. Senanayake ◽  
Pedro J. Ramírez ◽  
Iradwikanari Waluyo ◽  
Shankhamala Kundu ◽  
Kumudu Mudiyanselage ◽  
...  

ChemSusChem ◽  
2008 ◽  
Vol 1 (11) ◽  
pp. 905-910 ◽  
Author(s):  
Hicham Idriss ◽  
Morgan Scott ◽  
Jordi Llorca ◽  
Sze C. Chan ◽  
William Chiu ◽  
...  

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