Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulses

JETP Letters ◽  
2004 ◽  
Vol 79 (11) ◽  
pp. 529-531 ◽  
Author(s):  
S. I. Ashitkov ◽  
A. V. Ovchinnikov ◽  
M. B. Agranat
1998 ◽  
Vol 13 (7) ◽  
pp. 1808-1811 ◽  
Author(s):  
L. Nánai ◽  
R. Vajtai ◽  
Cs. Beleznai ◽  
J. Remes ◽  
S. Leppävuori ◽  
...  

Ultrafast changes in the crystal structure of GaAs induced by intense femtosecond laser pulses are detected and investigated. Atomic force microscopy and Raman microprobe analysis of the laser-treated area show centrosymmetric (disordered) features which are different from the original zinc-blend structure of the GaAs lattice. The frozen-in structure shows evidence for a special heat transfer from the laser-induced crater to the boundary, namely the heat has been transferred ballistically by a high-density electron-hole plasma.


2013 ◽  
Vol 106 (0) ◽  
pp. 411-418 ◽  
Author(s):  
D. M. Newns ◽  
T. F. Heinz ◽  
J. A. Misewich

2011 ◽  
Vol 83 (7) ◽  
Author(s):  
Guillaume Duchateau ◽  
Ghita Geoffroy ◽  
Anthony Dyan ◽  
Hervé Piombini ◽  
Stéphane Guizard

2013 ◽  
Vol 7 (4) ◽  
pp. 278-281 ◽  
Author(s):  
Martin Kozák ◽  
František Trojánek ◽  
Tomáš Popelárˇ ◽  
Petr Malý

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