Ultralow internal optical loss in separate-confinement quantum-well laser heterostructures

2004 ◽  
Vol 38 (12) ◽  
pp. 1430-1439 ◽  
Author(s):  
S. O. Slipchenko ◽  
D. A. Vinokurov ◽  
N. A. Pikhtin ◽  
Z. N. Sokolova ◽  
A. L. Stankevich ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Loss ◽  
Quantum Well Laser ◽  
Laser Heterostructures

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

2018 ◽  
Vol 52 (12) ◽  
pp. 1547-1550 ◽  
Author(s):  
N. V. Baidus ◽  
V. Ya. Aleshkin ◽  
A. A. Dubinov ◽  
Z. F. Krasilnik ◽  
K. E. Kudryavtsev ◽  
...  
Keyword(s):  
Quantum Well ◽  
Si Substrates ◽  
Quantum Well Laser ◽  
Laser Heterostructures

Exciton-induced enhancement of optical waveguide confinement in (Zn,Cd)(Se,S) quantum well laser heterostructures

1994 ◽  
Vol 15 (2) ◽  
pp. 65 ◽  
Author(s):  
Zh.I. Alferov ◽  
S.V. Ivanov ◽  
P.S. Kop'ev ◽  
A.V. Lebedev ◽  
N.N. Ledentsov ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Waveguide ◽  
Quantum Well Laser ◽  
Laser Heterostructures

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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