InGaAs/AlGaAs strained quantum well laser with semi‐insulating low temperature GaAs and lateraln‐p‐ncurrent confinement structures grown by molecular beam epitaxy
1999 ◽
Vol 17
(3)
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pp. 1281
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Keyword(s):
2003 ◽
Vol 103
(3)
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pp. 227-232
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Keyword(s):
Keyword(s):
2014 ◽
Vol 29
(3)
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pp. 035002
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Keyword(s):
1994 ◽
Vol 136
(1-4)
◽
pp. 64-68
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1995 ◽
Vol 150
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pp. 1344-1349
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