Measurement of the native oxide thickness on a reference relief pitch structure on a single-crystal silicon substrate

2013 ◽  
Vol 42 (2) ◽  
pp. 99-101
Author(s):  
V. P. Gavrilenko ◽  
A. A. Kuzin ◽  
A. Yu. Kuzin ◽  
A. A. Kuz’min ◽  
V. B. Mityukhlyaev ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Substrate ◽  
Single Crystal Silicon ◽  
Oxide Thickness ◽  
Native Oxide ◽  
Crystal Silicon ◽  
Pitch Structure ◽  
Single Crystal Silicon Substrate

scholarly journals Communication—Electrodeposition of Indium Directly on Silicon

2022 ◽  
Author(s):  
Anica Neumann ◽  
Olivia Schneble ◽  
Emily Warren
Keyword(s):  
Single Crystal ◽  
Silicon Substrate ◽  
Low Temperatures ◽  
Seed Layer ◽  
Direct Contact ◽  
Single Crystal Silicon ◽  
Vapor Liquid Solid ◽  
Crystal Silicon ◽  
Single Crystal Silicon Substrate ◽  
Direct Electrodeposition

Abstract Direct electrodeposition of indium onto silicon paves the way for advances in microelectronics, photovoltaics, and optoelectronics. Indium is generally electrodeposited onto silicon utilizing a physically or thermally deposited metallic seed layer. Eliminating this layer poses benefits in microelectronics by reducing resistive interfaces and in vapor-liquid-solid conversion to III-V material by allowing direct contact to the single-crystal silicon substrate for epitaxial conversion. We investigated conditions to directly electrodeposit indium onto n-type Si(100). We show that a two-step galvanostatic plating at low temperatures can consistently produce smooth, continuous films of indium over large areas, in bump morphologies, and conformally into inverted pyramids.

Single crystal silicon substrate for magnetic rigid disk

1994 ◽  
pp. 911-914
Author(s):  
Hideo Kaneko ◽  
Katushi Tokunaga ◽  
Yoshio Tawara ◽  
Noboru Tamai ◽  
Toyofumi Aoki ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Substrate ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Rigid Disk ◽  
Single Crystal Silicon Substrate

The Effect of contamination solutions and substrate conditions on Copper Particle Growth Behavior

1997 ◽  
Vol 477 ◽  
Author(s):  
Geun-Min Choi ◽  
Katsuyuki Sekijne ◽  
Hiroshi Morita ◽  
Tadahiro Ohmi
Keyword(s):  
Single Crystal ◽  
Amorphous Silicon ◽  
Single Crystal Silicon ◽  
Particle Growth ◽  
Oxide Thickness ◽  
Growth Behavior ◽  
Native Oxide ◽  
Ultrapure Water ◽  
Copper Contamination ◽  
Crystal Silicon

ABSTRACTCu particle growth behavior on two silicon substrates, amorphous and single crystal silicon, has been investigated using two contamination solutions. This study reveals that the growth behavior of Cu particle depends on substrate conditions and copper contamination solutions. Contamination level is independent of split conditions. From the SEM images of an amorphous silicon shows a big difference in the number of particles depending on copper contamination solution. The amorphous silicon has similar native oxide thickness in ultrapure water spiked with CuF2 and CuCl2, whereas the single crystal silicon is different from the native oxide thickness depending on copper contamination solution. When 1 ppm of Cu in ultrapure water was spiked as a function of time, the amount of Cu impurity on amorphous silicon in the early dipping stage was measured 10 times higher than that on single crystal silicon for both of copper contamination solutions.

Sign in / Sign up

Export Citation Format

Share Document