Spin injection in GaAs/GaSb quantum-well heterostructures

2010 ◽  
Vol 44 (2) ◽  
pp. 194-197 ◽  
Author(s):  
Ya. V. Terent’ev ◽  
A. A. Toropov ◽  
B. Ya. Meltser ◽  
A. N. Semenov ◽  
V. A. Solov’ev ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spin Injection

Electric field control of spin polarity in spin injection into InGaAs quantum dots from a tunnel-coupled quantum well

2019 ◽  
Vol 114 (13) ◽  
pp. 133101 ◽  
Author(s):  
Hang Chen ◽  
Satoshi Hiura ◽  
Junichi Takayama ◽  
Soyoung Park ◽  
Kazuhisa Sueoka ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Quantum Well ◽  
Spin Injection ◽  
Field Control ◽  
Coupled Quantum Well

Spin injection in the multiple quantum-well LED structure with the Fe/AlO x injector

2010 ◽  
Vol 53 (4) ◽  
pp. 649-653
Author(s):  
Hao Wu ◽  
HouZhi Zheng ◽  
Jian Liu ◽  
GuiRong Li ◽  
Ping Xu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spin Injection ◽  
Multiple Quantum Well ◽  
Multiple Quantum

Pump-Probe Study of Carrier-Spin Injection in a Diluted Magnetic Double Quantum Well of CdMnTe/CdTe

2008 ◽  
Vol 53 (1) ◽  
pp. 175-178
Author(s):  
A. Murayama ◽  
K. Nishibayashi ◽  
N. Kono ◽  
K. Saito ◽  
I. Souma ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spin Injection ◽  
Double Quantum ◽  
Pump Probe ◽  
Double Quantum Well ◽  
Diluted Magnetic

Dynamics of electron-spin injection in a heterovalent GaAs/AlGaAs/ZnMnSe structure with a coupled double quantum well of GaAs/AlGaAs

2013 ◽  
Vol 378 ◽  
pp. 393-396
Author(s):  
Y. Kuno ◽  
T. Sasaki ◽  
T. Kiba ◽  
V.Kh. Kaibyshev ◽  
F. Liaci ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Spin ◽  
Spin Injection ◽  
Double Quantum ◽  
Double Quantum Well

Highly polarized emission from electrical spin injection into an InGaAs quantum well with free carriers

2013 ◽  
Vol 103 (21) ◽  
pp. 212403 ◽  
Author(s):  
C. H. Li ◽  
G. Kioseoglou ◽  
A. Petrou ◽  
M. Korkusinski ◽  
P. Hawrylak ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spin Injection ◽  
Free Carriers ◽  
Polarized Emission ◽  
Electrical Spin ◽  
Ingaas Quantum Well

Circularly polarized lasing in a (110)-oriented quantum well vertical-cavity surface-emitting laser under optical spin injection

2009 ◽  
Vol 94 (13) ◽  
pp. 131108 ◽  
Author(s):  
Hiroshi Fujino ◽  
Shinji Koh ◽  
Satoshi Iba ◽  
Toshiyasu Fujimoto ◽  
Hitoshi Kawaguchi
Keyword(s):  
Quantum Well ◽  
Spin Injection ◽  
Cavity Surface ◽  
Circularly Polarized ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Vertical Cavity

Spin injection in self-assembled quantum dots coupled with a diluted magnetic quantum well

2007 ◽  
Vol 122-123 ◽  
pp. 800-803
Author(s):  
A. Murayama ◽  
T. Asahina ◽  
I. Souma ◽  
T. Koyama ◽  
K. Hyomi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Spin Injection ◽  
Self Assembled ◽  
Diluted Magnetic

scholarly journals Spin injection from Co2MnGa into an InGaAs quantum well

2008 ◽  
Vol 92 (23) ◽  
pp. 232101 ◽  
Author(s):  
M. C. Hickey ◽  
C. D. Damsgaard ◽  
S. N. Holmes ◽  
I. Farrer ◽  
G. A. C. Jones ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spin Injection ◽  
Ingaas Quantum Well

Spin Polarization of Electrons Injected from Fe into GaAs Quantum Well Characterized using Oblique Hanle Effect

2009 ◽  
Vol 1183 ◽  
Author(s):  
Eiji Wada ◽  
Mitsuru Itoh ◽  
Tomoyasu Taniyama ◽  
Masahito Yamaguchi
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Spin Polarization ◽  
Spin Injection ◽  
Electron Hole ◽  
Hanle Effect ◽  
Spin Depolarization ◽  
Polarization Of Light ◽  
Low Magnetic Field ◽  
Hole Recombination

AbstractWe study spin injection from an in-plane magnetized Fe thin layer into a GaAs/AlGaAs quantum well (QW) in low magnetic fields of ±0.37 T using oblique Hanle effect. An oblique low magnetic field induces the precession of electron spins in the GaAs QW, allowing us to detect the spin polarization of electrons injected across the Fe/AlGaAs interface. Our analysis of the circular polarization of light emitted in the electron-hole recombination process in the QW gives an estimate of the lower bounds of the spin polarization to be 4.0%. Also, a spin lifetime of 140 psec is obtained in this analysis, indicating that spin depolarization at the Fe/AlGaAs interface is more predominant rather than spin relaxation in the QW region.

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