Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas

2019 ◽  
Vol 53 (4) ◽  
pp. 484-488
Author(s):  
H. Khmissi ◽  
A. M. El Sayed
Keyword(s):  
Quantum Dots ◽  
Stark Effect ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Inas Quantum Dots ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Dimensional Electron Gas

Electron dynamics of a two-dimensional electron gas with a random array of InAs quantum dots

1999 ◽  
Vol 60 (11) ◽  
pp. 7780-7783 ◽  
Author(s):  
S. Cinà ◽  
D. D. Arnone ◽  
H. P. Hughes ◽  
C. L. Foden ◽  
D. M. Whittaker ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Gas ◽  
Two Dimensional ◽  
Electron Dynamics ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Inas Quantum Dots ◽  
Random Array ◽  
Dimensional Electron Gas

scholarly journals Quantum Confined Stark effect and temperature dependencies of photoluminescence of InAs quantum dots coupled with AlGaAs/GaAs two dimensional electron gas -=SUP=-*-=/SUP=-

2019 ◽  
Vol 53 (4) ◽  
pp. 500
Author(s):  
H. Khmissi ◽  
A.M. El Sayed
Keyword(s):  
Quantum Dots ◽  
Electric Field ◽  
Stark Effect ◽  
Electron Gas ◽  
Internal Electric Field ◽  
Dimensional Electron ◽  
Inas Quantum Dots ◽  
Hetero Structure ◽  
Quantum Confined Stark Effect ◽  
Dimensional Electron Gas

AbstractIn this work, Experimental study of the influence of internal electric field and the temperature on the photoluminescence of InAs self assembled quantum dots inserted in AlGaAs/GaAs modulation doped hetero-structure have been investigated. The internal electric field is controlled by an appropriate design of the hetero-structure. We have observed a red shift of the photoluminescence position peaks result from the quantum confined Stark effect due to the local electric field existing in the structure. Estimation values of the internal electric field have been obtained through carrier’s densities values in interface of AlGaAs/GaAs hetero-junction. An anomalous dependence of the full width at half maximum with temperature has been found, which attributed to the carrier’s dynamics between InAs quantum dots layer and the two-dimensional electron gas.

Sensitivity To Disorder Of Graphene-Like Lattices Of Quantum Dots And Antidots In Two-Dimensional Electron Gas

2016 ◽  
Vol 11 (1) ◽  
pp. 80-87
Author(s):  
Olga Tkachenko ◽  
Vitaliy Tkachenko
Keyword(s):  
Quantum Dots ◽  
Electron Gas ◽  
Three Dimensional ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Semiconductor Structures ◽  
Dimensional Electron Gas ◽  
Artificial Graphene ◽  
Electronic Channels

We compare three-dimensional electrostatics of semiconductor structures with graphene-like lattices of quantum dots and antidots formed in the plane of the two dimensional electron gas. With lattice constant fixed, the shape of the potential may be tuned so that both lattices have minband spectrum where the second Dirac feature is pronounced and not overlaid by the other states. We show that the lattice of quantum dots is more sensitive to fabrication imperfections, because sources of the disorder are located directly above the electronic channels. Thus the lattices of antidots should be preferred semiconductor artificial graphene candidates.

scholarly journals Ultra-shallow quantum dots in an undoped GaAs/AlGaAs two-dimensional electron gas

2013 ◽  
Vol 102 (10) ◽  
pp. 103507 ◽  
Author(s):  
W. Y. Mak ◽  
F. Sfigakis ◽  
K. Das Gupta ◽  
O. Klochan ◽  
H. E. Beere ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas ◽  
Undoped Gaas
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