Dependence of the Exciton-Light Coupling on the Quantum Well Width in an External Uniform Electric Field

2021 ◽  
Author(s):  
D. K. Loginov ◽  
A. V. Donets
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Uniform Electric Field ◽  
Light Coupling ◽  
Quantum Well Width

scholarly journals Зависимость светоэкситонного взаимодействия от ширины квантовой ямы во внешнем однородном электрическом поле

2021 ◽  
Vol 63 (4) ◽  
pp. 457
Author(s):  
Д.К. Логинов ◽  
А.В. Донец
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Strong Field ◽  
Numerical Calculations ◽  
Uniform Electric Field ◽  
Light Coupling ◽  
Analytical Expressions

The paper is devoted to analyse of the dependance of exciton-light coupling on a quantum well thickness at presence of an uniform electric field. It is shown that the increasing of quantum well thickness at an enough strong field results in decreasing of the exciton-light coupling in compare with narrower wells.The numerical calculations of longitudinal-transverse splitting are performed for a wide ranges of both electric field and values of quantum well thickness.The analyse of obtained data allows to get analytical expressions which desсribe the exciton-light coupling dependence like on the electric field as quantum well thickness.

Optical absorption coefficients in GaN/Al(Ga)N double inverse parabolic quantum wells under static external electric field

2016 ◽  
Vol 30 (25) ◽  
pp. 1650165 ◽  
Author(s):  
A. El Kadadra ◽  
K. Fellaoui ◽  
D. Abouelaoualim ◽  
A. Oueriagli
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
External Electric Field ◽  
Electric Fields ◽  
Optical Modulators ◽  
Absorption Coefficients ◽  
Mass Approximation ◽  
Device Applications ◽  
Quantum Well Width

In this work, we have investigated theoretically the effects of applied electric field on the linear and nonlinear optical properties in a GaN/Al[Formula: see text]Ga[Formula: see text]N double inverse parabolic quantum well for different Al concentrations at the well center. Our calculations are based on the potential morphing method in the effective mass approximation. The systematic theoretical investigation contains results with all possible combinations of the involved parameters, such as quantum well width, quantum barrier width, Al concentration at each well center and magnitude of the external electric field. Our results show that the electric fields strengths, the parameter of nanostructure and incident optical intensity have a great effect on the optical characteristics of these nanostructures. Thus, the absorption coefficients which can be suitable for great performance optical modulators and multiple infrared optical device applications can be easily obtained by tuning the external electric field value and the Al concentration at the well center.

Sign in / Sign up

Export Citation Format

Share Document