We present new methods for patterning and controlling the cross-section of the CDW conductor niobium
triselenide crystals to sub-micron dimensions using photolithography and electron beam lithography. Experiments
demonstrating these techniques are presented:
accurate four-probe measurement of the c-axis resistivity as a function
of temperature, and measurements of width and thickness-dependent size effects on the CDW condensate. In all
samples, a region with near-perfect rectangular cross-section is left to provide a control, eliminating the need to
compare different samples and reduces the role of sample-to-sample variations in the analyses.