Fabricated structures for studying mesoscopic physics of charge density waves

2002 ◽  
Vol 12 (9) ◽  
pp. 185-186
Author(s):  
K. O'Neill ◽  
E. Slot ◽  
H. van der Zant ◽  
K. Cicak ◽  
R. Thorne

We present new methods for patterning and controlling the cross-section of the CDW conductor niobium triselenide crystals to sub-micron dimensions using photolithography and electron beam lithography. Experiments demonstrating these techniques are presented: accurate four-probe measurement of the c-axis resistivity as a function of temperature, and measurements of width and thickness-dependent size effects on the CDW condensate. In all samples, a region with near-perfect rectangular cross-section is left to provide a control, eliminating the need to compare different samples and reduces the role of sample-to-sample variations in the analyses.

1999 ◽  
Vol 121 (2) ◽  
pp. 156-161
Author(s):  
Osamu Watanabe ◽  
Takayuki Kurata

Several plasticity phenomena display a size effect where the smaller the size is the stronger its response. This effect relates to the plastic gradients, appearing in plastically inhomogeneous material. The present paper describes results of an experimental meso-scale study using the specimens having rectangular cross section made of FCC polycrystal of pure Aluminum and OFHC Copper under the tensile or compressive loading. Experimental measurements are carried out to investigate thickness effect and grain size effect in connection with size effect, and the internal mechanism of plastic flow in the specimens is also discussed.


Author(s):  
Bin Li ◽  
Anastassios Mavrokefalos ◽  
Jianhua Zhou ◽  
Li Shi ◽  
Paul S. Ho ◽  
...  

A thermal nano-imprint method has been developed to pattern sub-40 nm polymer lines of Hydrogensilsesquioxane (HSQ) and electron beam resist ZEP 520A. The imprint template was the cross section surface of a selectively etched GaAs/AlGaAs heterostructure wafer. Silicon nanowires were formed using reactive ion etching (RIE) of a silicon-on-insulator wafer with the polymer nanolines as an etching mask. The obtained Si nanowires were well defined and continuous for a length up to hundreds of microns. Reaction of the silicon lines with a metal can lead to the formation of silicide interconnect lines, which is used to investigate the size effects on the transport and electromigration properties of interconnects for future microelectronics.


1980 ◽  
Vol 102 (2) ◽  
pp. 285-291 ◽  
Author(s):  
G. Yee ◽  
R. Chilukuri ◽  
J. A. C. Humphrey

A numerical study of heat transfer in 90 deg, constant cross section curved duct, steady, laminar, flow is presented. The work is aimed primarily at characterizing the effects on heat transfer of duct geometry and entrance conditions of velocity and temperature by considering, especially, the role of secondary motions during the developing period of the flow. Calculations are based on fully elliptic forms of the transport equations governing the flow. They are of engineering value and are limited in accuracy only by the degree of computational mesh refinement. A comparison with calculations based on parabolic equations shows how the latter can lead to erroneous results for strongly curved flows. Buoyant effects are excluded from the present study so that, strictly, the results apply to heat transfer flows in the absence of gravitational forces such as arise in spacecraft.


1997 ◽  
Author(s):  
Reginald L. Jaynes ◽  
Ronald M. Gilgenbach ◽  
Jonathan M. Hochman ◽  
J. I. Rintamaki ◽  
William E. Cohen ◽  
...  

2015 ◽  
Vol 16 (4) ◽  
pp. 661-666
Author(s):  
M.A. Ruvinskii ◽  
B.S. Dzundza ◽  
O.B. Kostyuk

Based on kinetic Boltzmann equation the boundary problem of calculating the conductivity and Seebeck coefficient for a film with a rectangular cross section is solved. Mirror- diffuse mechanism of reflection of the charge carriers from the surfaces of the film is considered. Calculations were performed for different thicknesses nondegenerate semiconductor n-PbTe. A comparison of theoretical calculations with obtained experimental data for vapor-phase condensates based on PbTe is made.


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