PHONON BROADENING OF IMPURITY SPECTRAL LINES: II. APPLICATION TO SILICON

1963 ◽  
Vol 41 (11) ◽  
pp. 1823-1835 ◽  
Author(s):  
Robert Barrie ◽  
Kyoji Nishikawa
Keyword(s):  
General Theory ◽  
Spectral Lines ◽  
Deformation Potential ◽  
Phonon Interaction ◽  
Potential Description ◽  
Electron Phonon Interaction ◽  
Shallow Impurity ◽  
Hydrogenic Model ◽  
Numerical Estimations

The general theory of the phonon broadening of impurity spectral lines discussed in an earlier paper is applied to shallow impurity levels in silicon. With the use of a modified hydrogenic model and a deformation potential description of the electron–phonon interaction, expressions are obtained for typical contributions to the half-widths. Some numerical estimations are made for both acceptor and donor cases and are compared with experiment.

Investigations of the Thermal Shifts and Electron–Phonon Coupling Parameters of R1 and R2 Lines for Cr3+-doped Forsterite

2014 ◽  
Vol 69 (8-9) ◽  
pp. 497-500 ◽  
Author(s):  
Xiao-Xuan Wu ◽  
Wen-Chen Zheng
Keyword(s):  
Thermal Expansion ◽  
Spectral Lines ◽  
Coupling Coefficients ◽  
Phonon Coupling ◽  
Lattice Thermal Expansion ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Electron Phonon Coupling ◽  
Coupling Parameters ◽  
Vibrational Contribution

The thermal shifts of R1 and R2 lines in Cr3+-doped forsterite (Mg2SiO4) are studied by considering both the static contribution due to lattice thermal expansion and the vibrational contribution due to electron-phonon interaction. In the studies, the thermal expansion coefficient of the Cr3+ center is assumed reasonably as that of the corresponding cluster in the host crystal. The results suggest that for R1 and R2 lines the static contributions are opposite in sign and in magnitude about 37% and 45%, respectively, of the corresponding vibrational contributions. The true electron-phonon coupling coefficients α' (obtained by considering both contributions) increase by about 58% and 81%, respectively, for R1 and R2 lines in comparison with the corresponding parameters α obtained by considering only the vibrational contribution. It appears that for the reasonable explanation of thermal shift of spectral lines and the exact estimation of electron-phonon coupling coefficient, both the static and vibrational contributions should be taken into account

Lokale Feldkorrekturen zum Elektron-Phonon-Matrixelement mit einer Anwendung auf den elektrischen Widerstand von Natrium im Bereich tiefer Temperaturen

1971 ◽  
Vol 26 (10) ◽  
pp. 1676-1684
Author(s):  
A. Rauh ◽  
H. Bross
Keyword(s):  
Integral Equation ◽  
Local Field ◽  
Present Calculation ◽  
Deformation Potential ◽  
Interband Transitions ◽  
Phonon Interaction ◽  
Conduction Electrons ◽  
Electron Phonon Interaction ◽  
Usual Procedure ◽  
Electron Wavefunction

Abstract The electron-phonon-interaction is investigated within the RPA-scheme taking into account the local field of the crystal. In order to describe the screening by the conduction electrons an integral equation is solved in the limit of long phonon-wavelength. In contrast to the usual procedure, which is based on the deformation potential, the form factor of the ion potential and the electron wavefunction are needed in the present calculation. In the case of sodium the latter are calculated by the OPW method. Neglecting virtual interband transitions the T 5 -coefficient is found to be enlarged by 30% due to the local field. The result cannot explain the existing discrepancy of a factor 3 between experimental and theoretical resistivity.

The simulation of the electron-phonon interaction in silicon

2018 ◽  
Vol 30 (12) ◽  
pp. 3-16
Author(s):  
A. Berezin ◽  
◽  
Yu. Volkov ◽  
M. Markov ◽  
I. Tarakanov ◽  
...  
Keyword(s):  
Phonon Interaction ◽  
Electron Phonon Interaction
Sign in / Sign up

Export Citation Format

Share Document