Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions

2007 ◽  
Vol 59 (4) ◽  
pp. 463-469 ◽  
Author(s):  
Y. Saito ◽  
T. Inokuchi ◽  
H. Sugiyama ◽  
K. Inomata
Keyword(s):  
Magnetic Field ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetization Switching ◽  
Hard Axis

In-plane magnetic field dependence of electric field-induced magnetization switching

2013 ◽  
Vol 103 (7) ◽  
pp. 072408 ◽  
Author(s):  
S. Kanai ◽  
Y. Nakatani ◽  
M. Yamanouchi ◽  
S. Ikeda ◽  
F. Matsukura ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electric Field ◽  
Field Dependence ◽  
Magnetic Field Dependence ◽  
Magnetization Switching

PATTERNED NANOSCALE MAGNETIC TUNNEL JUNCTIONS WITH DIFFERENT GEOMETRICAL STRUCTURES

SPIN ◽  
2011 ◽  
Vol 01 (01) ◽  
pp. 109-114 ◽  
Author(s):  
Z. C. WEN ◽  
Y. WANG ◽  
G. Q. YU ◽  
H. X. WEI ◽  
B. S. ZHANG ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Critical Current Density ◽  
Tunnel Junctions ◽  
Ring Width ◽  
Magnetic Tunnel Junctions ◽  
Geometrical Shape ◽  
Magnetization Switching ◽  
Geometrical Structures ◽  
Spintronic Devices ◽  
Shape Dependence

In this paper, patterned nanoscale magnetic tunnel junctions (MTJs) with different geometrical structures, including nanodisk (ND), nanoellipse (NE), nanoring (NR) and nanoelliptical ring (NER) with the scale of around 100nm and ring width of around 30nm, were fabricated, respectively. The geometrical-shape dependence of magnetic field-driven and current-induced magnetization switching (CIMS) were studied in the nanoscale magnetic tunnel junctions (MTJs). The NER-MTJs showed robust magnetization switching and low critical current density of CIMS, comparing with other geometrical-shaped MTJs. This may be due to the different distribution of current-induced Oersted field in different geometrical structures, which plays an assisted role in CIMS. The present experiments indicate that NER-MTJs may be one of the promising candidates for the cells of high-density and low-consumption spintronic devices.

TEMPERATURE AND MAGNETIC FIELD DEPENDENCE OF THE ELASTIC CONSTANTS IN Nd3Se4

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-461-C8-462 ◽  
Author(s):  
H. Fütterer ◽  
T. Yohannes ◽  
H. Bach ◽  
J. Pelzl ◽  
K. Nahm ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Field Dependence ◽  
Elastic Constants ◽  
Magnetic Field Dependence
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