PATTERNED NANOSCALE MAGNETIC TUNNEL JUNCTIONS WITH DIFFERENT GEOMETRICAL STRUCTURES

SPIN ◽  
2011 ◽  
Vol 01 (01) ◽  
pp. 109-114 ◽  
Author(s):  
Z. C. WEN ◽  
Y. WANG ◽  
G. Q. YU ◽  
H. X. WEI ◽  
B. S. ZHANG ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Critical Current Density ◽  
Tunnel Junctions ◽  
Ring Width ◽  
Magnetic Tunnel Junctions ◽  
Geometrical Shape ◽  
Magnetization Switching ◽  
Geometrical Structures ◽  
Spintronic Devices ◽  
Shape Dependence

In this paper, patterned nanoscale magnetic tunnel junctions (MTJs) with different geometrical structures, including nanodisk (ND), nanoellipse (NE), nanoring (NR) and nanoelliptical ring (NER) with the scale of around 100nm and ring width of around 30nm, were fabricated, respectively. The geometrical-shape dependence of magnetic field-driven and current-induced magnetization switching (CIMS) were studied in the nanoscale magnetic tunnel junctions (MTJs). The NER-MTJs showed robust magnetization switching and low critical current density of CIMS, comparing with other geometrical-shaped MTJs. This may be due to the different distribution of current-induced Oersted field in different geometrical structures, which plays an assisted role in CIMS. The present experiments indicate that NER-MTJs may be one of the promising candidates for the cells of high-density and low-consumption spintronic devices.

scholarly journals Full voltage manipulation of the resistance of a magnetic tunnel junction

2019 ◽  
Vol 5 (12) ◽  
pp. eaay5141 ◽  
Author(s):  
Aitian Chen ◽  
Yuelei Zhao ◽  
Yan Wen ◽  
Long Pan ◽  
Peisen Li ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Energy Efficient ◽  
Room Temperature ◽  
Efficient Solution ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Free Layer ◽  
Spintronic Devices ◽  
Electrical Control

One of the motivations for multiferroics research is to find an energy-efficient solution to spintronic applications, such as the solely electrical control of magnetic tunnel junctions. Here, we integrate spintronics and multiferroics by depositing MgO-based magnetic tunnel junctions on ferroelectric substrate. We fabricate two pairs of electrodes on the ferroelectric substrate to generate localized strain by applying voltage. This voltage-generated localized strain has the ability to modify the magnetic anisotropy of the free layer effectively. By sequentially applying voltages to these two pairs of electrodes, we successively and unidirectionally rotate the magnetization of the free layer in the magnetic tunnel junctions to complete reversible 180° magnetization switching. Thus, we accomplish a giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field. Our results are important for exploring voltage control of magnetism and low-power spintronic devices.

Thermal stability and magnetization switching in perpendicular magnetic tunnel junctions

2020 ◽  
Vol 116 (19) ◽  
pp. 192408 ◽  
Author(s):  
I. Volvach ◽  
J. G. Alzate ◽  
Y.-J. Chen ◽  
A. J. Smith ◽  
D. L. Kencke ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Magnetization Switching

Spin-filtering and tunneling magnetoresistance effects in 6,6,12-graphyne-based molecular magnetic tunnel junctions

2019 ◽  
Vol 21 (5) ◽  
pp. 2734-2742 ◽  
Author(s):  
Jin Li ◽  
Maoyun Di ◽  
Zhi Yang ◽  
Li-Chun Xu ◽  
Yongzhen Yang ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Graphene Nanoribbons ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Spintronic Devices ◽  
Zigzag Graphene Nanoribbons ◽  
Spin Filtering

By designing two kinds of molecular magnetic tunnel junctions based on 6,6,12-graphyne and zigzag graphene nanoribbons, the spin-filtering and tunneling magnetoresistance effects of spintronic devices can be dramatically enhanced.

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