Dissipative oscillations in spatially restricted ecosystems due to long range migration

2008 ◽  
Vol 66 (1) ◽  
pp. 97-106 ◽  
Author(s):  
N. Kouvaris ◽  
A. Provata
Keyword(s):  
1986 ◽  
Vol 20 (3) ◽  
pp. 427-432 ◽  
Author(s):  
J. Lauzier ◽  
J. Hillairet ◽  
G. Funk ◽  
H. Schultz

2013 ◽  
Vol 3 (1) ◽  
Author(s):  
Genki Ichinose ◽  
Masaya Saito ◽  
Hiroki Sayama ◽  
David Sloan Wilson
Keyword(s):  

2006 ◽  
Vol 103 (3) ◽  
pp. 411-414
Author(s):  
B. L. Oksengendler ◽  
N. N. Turaeva
Keyword(s):  

2009 ◽  
Vol 22 (2) ◽  
pp. 157-162 ◽  
Author(s):  
Martin Biuw ◽  
Christian Lydersen ◽  
P.J. Nico de Bruyn ◽  
Aline Arriola ◽  
Greg G.J. Hofmeyr ◽  
...  

AbstractWe describe a long-range migration of a pre-moulting adult chinstrap penguin from Bouvetøya, a small relatively recently established colony, to the South Sandwich Islands, where large, established colonies of this species reside. The trip lasted around three weeks, covered ∼3600 km, and the time of arrival was consistent with the annual moult. The bird did not travel along the shortest path or along a constant bearing, but instead followed what appeared to be a series of two or three rhumb lines of constant bearing. Small southward and northward deviations from the general path were consistent with local water currents. Travel speeds were high during daylight but decreased at night, suggesting that resting or opportunistic feeding occurred preferentially at night. While long-range winter migrations of chinstraps to feeding areas in the vicinity of distant colonies have been previously described, this is the first observation of such a trip during the period between breeding and moulting, and the first record of an individual actually arriving at one of these distant colonies. This has implications for understanding population structure and management of this important Southern Ocean predator.


Author(s):  
Oliver Dominik MacLean ◽  
Si Yue Guo ◽  
Matthew Timm ◽  
John C. Polanyi
Keyword(s):  

1998 ◽  
Vol 293 (5-6) ◽  
pp. 547-554 ◽  
Author(s):  
Eugenii Ya. Misochko ◽  
Alexander V. Akimov ◽  
Charles A. Wight

1997 ◽  
Vol 469 ◽  
Author(s):  
J. Lalita ◽  
P. Pellegrino ◽  
A. Hallén ◽  
B. G. Svensson ◽  
N. Keskitalo ◽  
...  

ABSTRACTThe temperature dependence of the so-called reverse dose rate effect for generation of vacancy-type defects in silicon has been investigated using samples implanted with 1.3 MeV protons at temperatures between 70 and 300 K. The effect is found to involve a thermally controlled process which exhibits an activation energy of ∼0.065 eV, possibly associated with rapid migration of Si self-interstitials (I). Further, using a concept of dual Si ion-implants long range migration of I:s at room temperature has been studied. Annihilation of vacancy-type defects at a depth of ∼3 μm is obtained by injection of I:s from a shallow implant with sufficiently high dose.


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