Irreversible deposition of extended objects with diffusional relaxation on discrete substrates

2010 ◽  
Vol 73 (3) ◽  
pp. 439-445 ◽  
Author(s):  
I. Lončarević ◽  
Z. M. Jakšić ◽  
S. B. Vrhovac ◽  
Lj. Budinski-Petković
1980 ◽  
Vol 28 (3) ◽  
pp. 319-325 ◽  
Author(s):  
T. Mori ◽  
M. Okabe ◽  
T. Mura

1968 ◽  
Vol 27 (1) ◽  
pp. K37-K39
Author(s):  
J. Kinel ◽  
L. Kozłsowski ◽  
J. W. Morońa

1994 ◽  
Vol 356 ◽  
Author(s):  
S. Bader ◽  
E. M. Kalaugher ◽  
E. Arzt

AbstractThe microstructure and mechanical properties of hot (h) and cold (c) sputtered Al-lwt%Si and Al-lwt%Si-0.5wt%Cu films were studied using transmission electron microscopy and wafer curvature stress measurements.Stress/temperature curves of all films showed only slight differences in compression on healing once a stable grain size was established. However, on cooling several remarkable differences were observed. These observations cannot be explained by assuming dislocation glide/climb as the dominant relaxation mechanism. The results will be discussed in terms of grain boundary diffusional relaxation (Coble creep), which occurs in addition to dislocation glide.


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