BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES

Author(s):  
Lester F. Eastman ◽  
William J. Schaff ◽  
Ho-Young Cha ◽  
Xiao-Dong Chen ◽  
Michael G. Spencer ◽  
...  
2007 ◽  
Vol 17 (01) ◽  
pp. 173-176 ◽  
Author(s):  
BARBAROS ASLAN ◽  
LESTER F. EASTMAN ◽  
WILLIAM J. SCHAFF ◽  
XIAODONG CHEN ◽  
MICHAEL G. SPENCER ◽  
...  

We present the experimental development and characterization of GaN ballistic diodes for THz operation. Fabricated devices have been described and gathered experimental data is discussed. The major problem addressed is the domination of the parasitic resistances which significantly reduce the accelerating electric field across the ballistic region (intrinsic layer).


2006 ◽  
Vol 16 (02) ◽  
pp. 437-441
Author(s):  
Lester F. Eastman ◽  
William J. Schaff ◽  
Ho-Young Cha ◽  
Xiao-Dong Chen ◽  
Michael G. Spencer ◽  
...  

A short drift distance N - I - N device, with high electric field, allows ballistic electron accelerations and drift. Conditions can be enhanced by using a heterojunction to launch electrons at finite energy. Initial I(V) results without the heterojunctions are presented, as well as the design of a structure which has the heterostructure, projected results are speculated upon, along with an on-chip circuit being used.


Sign in / Sign up

Export Citation Format

Share Document