BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES

2007 ◽  
Vol 17 (01) ◽  
pp. 173-176 ◽  
Author(s):  
BARBAROS ASLAN ◽  
LESTER F. EASTMAN ◽  
WILLIAM J. SCHAFF ◽  
XIAODONG CHEN ◽  
MICHAEL G. SPENCER ◽  
...  
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Electron Acceleration ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Experimental Development ◽  
Ballistic Electron

We present the experimental development and characterization of GaN ballistic diodes for THz operation. Fabricated devices have been described and gathered experimental data is discussed. The major problem addressed is the domination of the parasitic resistances which significantly reduce the accelerating electric field across the ballistic region (intrinsic layer).

BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES

2006 ◽  
Vol 16 (02) ◽  
pp. 437-441
Author(s):  
Lester F. Eastman ◽  
William J. Schaff ◽  
Ho-Young Cha ◽  
Xiao-Dong Chen ◽  
Michael G. Spencer ◽  
...  
Keyword(s):  
Electric Field ◽  
Electron Acceleration ◽  
Finite Energy ◽  
High Electric Field ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Ballistic Electron ◽  
Drift Conditions ◽  
On Chip

A short drift distance N - I - N device, with high electric field, allows ballistic electron accelerations and drift. Conditions can be enhanced by using a heterojunction to launch electrons at finite energy. Initial I(V) results without the heterojunctions are presented, as well as the design of a structure which has the heterostructure, projected results are speculated upon, along with an on-chip circuit being used.

BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES

2006 ◽  
Author(s):  
Lester F. Eastman ◽  
William J. Schaff ◽  
Ho-Young Cha ◽  
Xiao-Dong Chen ◽  
Michael G. Spencer ◽  
...  
Keyword(s):  
Electron Acceleration ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Ballistic Electron

scholarly journals Generation of sequences of strong electric monopulses in nitride films

2021 ◽  
Vol 34 (2) ◽  
pp. 187-201
Author(s):  
Volodymyr Grimalsky ◽  
Svetlana Koshevaya ◽  
Jesus Escobedo-Alatorre ◽  
Anatoliy Kotsarenko
Keyword(s):  
Electric Field ◽  
Electric Fields ◽  
Strong Electric Field ◽  
Numerical Algorithms ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Threshold Values ◽  
Bias Electric Field ◽  
Bulk Semiconductors ◽  
Strong Electric Fields

This paper presents theoretical investigation of the excitation of the sequences of strong nonlinear monopulses of space charge waves from input small envelope pulses with microwave carrier frequencies due to the negative differential conductivity in n-GaN and n-InN films. The stable numerical algorithms have been used for nonlinear 3D simulations. The sequences of the monopulses of the strong electric field of 3 - 10 ps durations each can be excited. The bias electric field should be chosen slightly higher than the threshold values for observing the negative differential conductivity. The doping levels should be moderate 1016 -1017 cm-3in the films of ? 2 mm thicknesses. The input microwave carrier frequencies of the exciting pulses of small amplitudes are up to 30 GHz in n-GaN films, whereas in n-InN films they are lower, up to 20 GHz. The sequences of the electric monopulses of high peak values are excited both in the uniform nitride films and in films with non-uniform conductivity. These nonlinear monopulses in the films differ from the domains of strong electric fields in the bulk semiconductors. In the films with non-uniform doping the nonlinear pulses are excited due to the inhomogeneity of the electric field near the input end of the film and the output nonlinear pulses are rather domains.

scholarly journals Generalized Einstein Relation and Negative Differential Conductivity in Gases

1984 ◽  
Vol 37 (1) ◽  
pp. 35 ◽  
Author(s):  
RE Robson
Keyword(s):  
Electric Field ◽  
Momentum Transfer ◽  
Applied Electric Field ◽  
Transport Coefficients ◽  
Charged Particles ◽  
Inelastic Collisions ◽  
Einstein Relation ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Generalized Einstein Relation

Transport coefficients of charged particles undergoing both elastic and inelastic collisions with a gas of neutral molecules are calculated using momentum-transfer theory. A criterion is obtained for the phenomenon of negative differential conductivity (i.e. the drift velocity decreasing with applied electric field) and the well-known generalized Einstein relation is appropriately modified.

scholarly journals Domain Suppression in the Negative Differential Conductivity Region of Carbon Nanotubes by Applied AC Electric Field

2012 ◽  
Vol 02 (04) ◽  
pp. 274-277 ◽  
Author(s):  
Sulemana S. Abukari ◽  
Samuel Y. Mensah ◽  
Kofi W. Adu ◽  
Natalia G. Mensah ◽  
Kwadwo A. Dompreh ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Electric Field ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Ac Electric Field

scholarly journals Mechanism for negative differential conductivity in holographic conductors

2020 ◽  
Vol 2020 (12) ◽  
Author(s):  
Shuta Ishigaki ◽  
Shin Nakamura
Keyword(s):  
Electric Field ◽  
Bound States ◽  
Charge Carriers ◽  
Strongly Correlated ◽  
Negative Differential Conductivity ◽  
Differential Conductivity ◽  
Free Carriers

Abstract We clarify the mechanism for negative differential conductivity in holographic conductors. Negative differential conductivity is a phenomenon in which the electric field decreases with the increase of the current. This phenomenon is widely observed in strongly correlated insulators, and it has been known that some models of AdS/CFT correspondence (holographic conductors) reproduce this behaviour. We study the mechanism for negative differential conductivity in holographic conductors by analyzing the lifetime of the bound states of the charge carriers. We find that when the system exhibits negative differential conductivity, the lifetime of the bound states grows as the electric field increases. This suggests that the negative differential conductivity in this system is realized by the suppression of the ionization of the bound states that supplies the free carriers.

Sign in / Sign up

Export Citation Format

Share Document