EXTENDED WAVELENGTH (1.0 TO 1.3 μm) InGaAs/GaAs QUANTUM DOT GaAs-BASED VERTICAL-CAVITY SURFACE-EMITTING AND LATERAL-CAVITY EDGE-EMITTING LASERS

Author(s):  
D. G. DEPPE ◽  
D. L. HUFFAKER
2010 ◽  
Vol 107 (6) ◽  
pp. 063107
Author(s):  
D. W. Xu ◽  
C. Z. Tong ◽  
S. F. Yoon ◽  
L. J. Zhao ◽  
Y. Ding ◽  
...  

1998 ◽  
Vol 09 (04) ◽  
pp. 979-1005
Author(s):  
D. G. DEPPE ◽  
D. L. HUFFAKER

An important advance in InGaAs/GaAs quantum dot lasers has been the demonstration of lasing at wavelengths significantly longer than that possible using InGaAs strained quantum wells, extending beyond 1.3 μm. These fully GaAs-based active regions are compatible with commercial vertical-cavity surface-emitting laser (VCSEL) technology based on selective oxidation, and offer novel performance due to their three-dimensional electronic confinement. This chapter reviews the status of long wavelength quantum dot edge-emitting lasers and VCSELs, and presents some of the new physical principles needed to understand their novel device characteristics.


2003 ◽  
pp. 226-263
Author(s):  
Victor M. Ustinov ◽  
Alexey E. Zhukov ◽  
Anton Yu. Egorov ◽  
Nikolai A. Maleev

1998 ◽  
Author(s):  
James A. Lott ◽  
Michael J. Noble ◽  
John P. Loehr ◽  
Nikolai N. Ledentsov ◽  
Victor M. Ustinov ◽  
...  

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