A single hole in a quantum antiferromagnet: selfconsistent Green’s function approach

1991 ◽  
Vol 05 (01n02) ◽  
pp. 207-217 ◽  
Author(s):  
Gerardo Martínez ◽  
Peter Horsch

We solved numerically the integral equation for the selfenergy which describes the motion of a single hole in a two-dimensional quantum antiferromagnet (AF) within the selfconsistent Born approximation. This formulation stresses the similarity of the AF-spin polaron with the standard polaron problem. We confine our calculation to finite cluster geometries and compare with results from previous exact diagonalization studies. The spectral function is characterized by a narrow quasiparticle (qp) peak at the low energy side of the spectra, which appears to be well separated from the incoherent band part for large enough J values. For small J we find a reduced width of ~7t for the incoherent band. The bottom of the coherent qp band always occurs at (±π/2, ±π/2). Its bandwidth initially increases with J until J≃t and then decreases as 2t2/J. A complete characterization of our solution is given, including the dispersion relation and effective masses of this quasiparticle. The comparison with exact diagonalization studies for a 4×4 cluster is remarkably good. From our results we see that a lattice of 16×16 sites describes adequately the thermodynamic limit. We conclude that the simple Born approximation is a valuable scheme to characterize the dynamics of one hole in the t-J model. both in the perturbative and the strong coupling regimes.

Author(s):  
Graeme W Milton ◽  
Pierre Seppecher

We give a complete characterization of the possible response matrices at a fixed frequency of n -terminal electrical networks of inductors, capacitors, resistors and grounds, and of n -terminal discrete linear elastodynamic networks of springs and point masses, both in three-dimensional and two-dimensional cases. Specifically, we construct networks that realize any response matrix that is compatible with the known symmetry properties and thermodynamic constraints of response matrices. Owing to a mathematical equivalence, we also obtain a characterization of the response matrices of discrete acoustic networks.


1994 ◽  
Vol 08 (27) ◽  
pp. 3843-3858
Author(s):  
C.Q. WU ◽  
Z.B. SU ◽  
L. YU

Within the Schwinger-boson approach for the t-J model, the single hole problem in a two-dimensional quantum antiferromagnet is studied by using the quantum Bogoliubovde Gennes formalism which treats the distortion of the spin background and quantum spin fluctuations on an equal footing. Several self-trapped localized hole states are found in the distorted spin-background as in the case of an anisotropic Heisenberg model. These localized hole states survive at finite temperatures when the antiferromagnetic order becomes short-ranged. The energy separation between the two lowest states is reduced by considering the spin-background distortion, but it remains finite.


1991 ◽  
Vol 43 (13) ◽  
pp. 10882-10889 ◽  
Author(s):  
Frank Marsiglio ◽  
Andrei E. Ruckenstein ◽  
Stefan Schmitt-Rink ◽  
Chandra M. Varma

2006 ◽  
Vol 39 (4) ◽  
pp. 571-581 ◽  
Author(s):  
L. Capello ◽  
T. H. Metzger ◽  
V. Holý ◽  
M. Servidori ◽  
A. Malachias

The use of a combination of X-ray scattering techniques for the complete characterization of ultra-low-energy (E< 5 keV) implanted Si is discussed. Grazing incidence diffuse X-ray scattering (GI-DXS) reveals the properties of the defects confined within thin crystalline layers with depth resolution. Due to the weak diffuse intensity arising from such defects, the high brilliance of synchrotron radiation is required. GI-DXS proved to be particularly well suited for the investigation of the so-called `end-of-range' defects. In a complementary way, X-ray diffraction (XRD) in the vicinity of the 004 Bragg reflection is sensitive to the distribution of the strain in the Si lattice in the direction perpendicular to the sample surface. The structural characterization is complemented by the electron density profile of the near-surface amorphous region provided by specular reflectivity (SR). It will be shown that only by merging the results obtained with GI-DXS, XRD and SR, is it possible to obtain the detailed structural characterization of the implanted Si samples.


2007 ◽  
Vol 32 (11) ◽  
pp. 1372 ◽  
Author(s):  
S. V. Popruzhenko ◽  
N. I. Shvetsov-Shilovski ◽  
S. P. Goreslavski ◽  
W. Becker ◽  
G. G. Paulus

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