Impurity Resistivity under Thermalized Condition

1992 ◽  
Vol 06 (07) ◽  
pp. 1079-1098 ◽  
Author(s):  
C.S. Ting ◽  
L.Y. Chen

The standard impurity resistivity based upon the force-balance equation is derived with use of the method of closed-time-path Green’s functions. In this the effects from both the noncommutability of the center of mass fluctuations at different times and the exact noncannonical commutation relations between the coordinates and momentum of relative electrons are considered. In the presence of a short momentum-conserving inelastic scattering time due to electron-electron interaction, fast thermalization among charge carriers can be achieved. Under this condition, the (thermalized) impurity resistivity will have different form than the standard impurity resistivity and it is practically given by the lowest order electron-impurity term in the force balance equation. We also demonstrate that this conclusion is consistent with results based upon the Boltzmann equation in a relaxation time approximation.

2018 ◽  
Vol 97 (4) ◽  
Author(s):  
Alina Czajka ◽  
Sigtryggur Hauksson ◽  
Chun Shen ◽  
Sangyong Jeon ◽  
Charles Gale

2018 ◽  
Vol 19 (1) ◽  
pp. 48-52
Author(s):  
V. V. Kuryliuk ◽  
O. M. Krit

SiGe films have attracted much attention recently due to experimental demonstrations of improved thermoelectric properties over those of the corresponding bulk material. However, despite this increasing attention, available information on the thermoelectric properties of Si1-xGex films is quite limited, especially for nonuniform composition in wide temperature interval. In this paper we have used the Boltzmann equation under the relaxation-time approximation to calculate the thermal conductivity of Si1-xGex films with nonuniform composition. It is confirmed that SiGe films with nonuniform composition has significantly lower thermal conductivity than its uniform counterpart. This suggests that an improvement in thermoelectric properties is possible by using the SiGe films with nonuniform distribution of germanium.


Longitudinal magnetoresistance has been measured in a number of single crystals of silver and one very pure single crystal of copper in fields up to 65 kG and at temperatures between 4.2 and 35 °K. The purpose of the work has been to investigate the effects of different types of electron scattering, in particular small angle scattering. It has been found that at 4.2 °K impure crystals obey the relaxation time approximation fairly well, whereas crystals that have been purified (by oxidation at 800 °C) do not. Above 4.2 °K, the addition of long wavelength phonons has caused the magnetoresistance to increase substantially, as predicted by Pippard (1964), but agreement with Pippard’s theory is only qualitative. To account for the results a more detailed treatment of the scattering is required.


2005 ◽  
Vol 19 (06) ◽  
pp. 1017-1027 ◽  
Author(s):  
WEI-QING HUANG ◽  
KE-QIU CHEN ◽  
Z. SHUAI ◽  
LINGLING WANG ◽  
WANGYU HU

We theoretically investigate the lattice thermal conductivity of a hollow Si nanowire under the relaxation time approximation. The results show that the thermal conductivity in such structure is decreased markedly below the bulk value due to phonon confinement and boundary scattering. The thermal conductivities under different scattering mechanisms are given, and it is found that the boundary scattering is dominant resistive process for the decrease of the thermal conductivity.


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