metalorganic molecular beam epitaxy Recently Published Documents

Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate

10.1016/j.jcrysgro.2016.05.050 ◽

2016 ◽

Vol 449 ◽

pp. 86-91 ◽

Cited By ~ 1

Author(s):

M. Mitsuhara ◽

N. Watanabe ◽

H. Yokoyama ◽

R. Iga ◽

N. Shigekawa

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Strain Relaxation ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Quantum Well Structure ◽

Shadowing and mask opening effects during selective-area vapor–liquid–solid growth of InP nanowires by metalorganic molecular beam epitaxy

Nanotechnology ◽

10.1088/0957-4484/24/47/475302 ◽

2013 ◽

Vol 24 (47) ◽

pp. 475302 ◽

Cited By ~ 24

Author(s):

A Kelrich ◽

Y Calahorra ◽

Y Greenberg ◽

A Gavrilov ◽

S Cohen ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Vapor Liquid Solid ◽

Selective Area ◽

Metalorganic Molecular Beam Epitaxy ◽

Vapor Liquid Solid Growth ◽

Vapor Liquid

Photoluminescence studies of indium nitride films grown on oxide buffer by metalorganic molecular-beam epitaxy

10.1016/j.jcrysgro.2010.12.020 ◽

2011 ◽

Vol 320 (1) ◽

pp. 32-35 ◽

Cited By ~ 6

Author(s):

Fang-I Lai ◽

Shou-Yi Kuo ◽

Woei-Tyng Lin ◽

Wei-Chun Chen ◽

Chien-Nan Hsiao ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Indium Nitride ◽

Metalorganic Molecular Beam Epitaxy ◽

Photoluminescence Studies

High-Temperature Growth of GaN and Al x Ga1−x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

Journal of Electronic Materials ◽

10.1007/s11664-010-1102-y ◽

2010 ◽

Vol 39 (5) ◽

pp. 473-477

Author(s):

Daniel Billingsley ◽

Walter Henderson ◽

W. Alan Doolittle

Keyword(s):

High Temperature ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Temperature Growth ◽

Carbon reduction and antimony incorporation in InGaAsSb films grown by metalorganic molecular beam epitaxy using tris-dimethylaminoantimony

10.1016/j.jcrysgro.2009.06.011 ◽

2009 ◽

Vol 311 (14) ◽

pp. 3636-3639 ◽

Cited By ~ 7

Author(s):

Manabu Mitsuhara ◽

Tomonari Sato ◽

Norio Yamamoto ◽

Hideki Fukano ◽

Yasuhiro Kondo

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Carbon Reduction ◽

Response to “Comment on ‘Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy’” [J. Crystal Growth 301–302 (2007) 277]

10.1016/j.jcrysgro.2007.11.143 ◽

2008 ◽

Vol 310 (3) ◽

pp. 723 ◽

Cited By ~ 1

Author(s):

M. Jo ◽

I. Suemune

Keyword(s):

Quantum Dots ◽

Crystal Growth ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Type Ii ◽

Luminescence Study ◽

Comment on “Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy”

10.1016/j.jcrysgro.2007.11.142 ◽

2008 ◽

Vol 310 (4) ◽

pp. 788 ◽

Cited By ~ 1

Author(s):

Y. Gu ◽

I.L. Kuskovsky

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Type Ii ◽

Luminescence Study ◽

Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy

10.1016/j.jcrysgro.2006.11.292 ◽

2007 ◽

Vol 301-302 ◽

pp. 277-280 ◽

Cited By ~ 12

Author(s):

M. Jo ◽

M. Endo ◽

H. Kumano ◽

I. Suemune

Keyword(s):

Quantum Dots ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Type Ii ◽

Luminescence Study ◽

Annealing effects on the properties of HfO2 films grown by metalorganic molecular beam epitaxy

Microelectronic Engineering ◽

10.1016/j.mee.2006.05.003 ◽

2006 ◽

Vol 83 (11-12) ◽

pp. 2452-2457 ◽

Cited By ~ 11

Author(s):

Tae-Hyoung Moon ◽

Jae-Woong Lee ◽

Moon-Ho Ham ◽

Jae-Min Myoung

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Annealing Effects ◽