Electrical Properties ofHg1-xCdxTeGrown by Low-Temperature Metalorganic Vapor Phase Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 12A) ◽  
pp. 6481-6485 ◽  
Author(s):  
Touati Ferid ◽  
Kazuhito Yasuda ◽  
Hiroki Hatano ◽  
Takayuki Maejima ◽  
Masaya Minamide ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

scholarly journals Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy

2008 ◽  
Vol 57 (9) ◽  
pp. 5923
Author(s):  
Wang Lai ◽  
Zhang Xian-Peng ◽  
Xi Guang-Yi ◽  
Zhao Wei ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Low temperature growth of (100) HgCdTe layers with DtBTe in metalorganic vapor phase epitaxy

1995 ◽  
Vol 24 (9) ◽  
pp. 1093-1097 ◽  
Author(s):  
K. Yasuda ◽  
H. Hatano ◽  
T. Ferid ◽  
K. Kawamoto ◽  
T. Maejima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth

Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 4913-4918 ◽  
Author(s):  
Chin-I Liao ◽  
Kao-Feng Yarn ◽  
Chien-Lien Lin ◽  
Yu-Lu Lin ◽  
Yeong-Her Wang
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Gaas Substrates ◽  
Direct Growth

scholarly journals Low temperature homoepitaxy of (010) β-Ga2O3 by metalorganic vapor phase epitaxy: Expanding the growth window

2020 ◽  
Vol 117 (14) ◽  
pp. 142102 ◽  
Author(s):  
Arkka Bhattacharyya ◽  
Praneeth Ranga ◽  
Saurav Roy ◽  
Jonathan Ogle ◽  
Luisa Whittaker-Brooks ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Role of low-temperature AlGaN interlayers in thick GaN on silicon by metalorganic vapor phase epitaxy

2012 ◽  
Vol 111 (12) ◽  
pp. 124505 ◽  
Author(s):  
S. Fritze ◽  
P. Drechsel ◽  
P. Stauss ◽  
P. Rode ◽  
T. Markurt ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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