Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 4913-4918 ◽  
Author(s):  
Chin-I Liao ◽  
Kao-Feng Yarn ◽  
Chien-Lien Lin ◽  
Yu-Lu Lin ◽  
Yeong-Her Wang
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Gaas Substrates ◽  
Direct Growth

Low temperature growth of InGaAs layers on misoriented GaAs substrates by metalorganic vapor phase epitaxy

2002 ◽  
Vol 80 (12) ◽  
pp. 2054-2056 ◽  
Author(s):  
Y. Takano ◽  
K. Kobayashi ◽  
H. Iwahori ◽  
N. Kuroyanagi ◽  
K. Kuwahara ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gaas Substrates

Direct growth of high-quality CdTe epilayers on Si(211) substrates by metalorganic vapor-phase epitaxy

2005 ◽  
Vol 284 (1-2) ◽  
pp. 15-19 ◽  
Author(s):  
M. Niraula ◽  
K. Yasuda ◽  
H. Ohnishi ◽  
K. Eguchi ◽  
H. Takahashi ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Direct Growth

Growth of CDTE on GaAs and Si Substrates by Organometallic Vapor Phase Epitaxy

1993 ◽  
Vol 318 ◽  
Author(s):  
Ishwara Bhat
Keyword(s):  
Vapor Phase ◽  
Atomic Layer ◽  
Cdte Layer ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality ◽  
X Ray ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Direct Growth

ABSTRACTEpitaxial (100) CdTe layers have been grown by organometallic vapor phase epitaxy (OMVPE) on GaAs and Si substrates. A thin layer of CdTe was first grown by atomic layer epitaxy (ALE) on GaAs substrates followed by thicker CdTe layer by conventional organometallic vapor phase epitaxy (OMVPE). This process resulted in high quality (100) CdTe on GaAs substrates. On Si substrates, direct growth of CdTe resulted in only polycrystalline layers. Hence, a thin Ge buffer layer grown at low temperature followed by an interfacial layer of ZnTe was used to get high quality (100) CdTe on Si. The process developed here eliminates the high temperature (>850°C) deoxidation step generally required when Si substrates are used. The CdTe layers were characterized by X-ray diffraction and optical microscopy. X-ray rocking curve with full width at half maximum (FWHM) of about 260 arcsec has been obtained for a 4 um thick CdTe layer. The results presented demonstrate novel techniques to control the hetero-interfaces in order to grow high quality CdTe on GaAs and Si substrates.

Threading Dislocations and Phase Separation in InGaAs Layers on GaAs Substrates Grown by Low-Temperature Metalorganic Vapor Phase Epitaxy

2005 ◽  
Vol 44 (9A) ◽  
pp. 6403-6411 ◽  
Author(s):  
Yasushi Takano ◽  
Kazu Kobayashi ◽  
Hideaki Iwahori ◽  
Masayoshi Umezawa ◽  
Sho Shirakata ◽  
...  
Keyword(s):  
Phase Separation ◽  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Threading Dislocations ◽  
Gaas Substrates

RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

2013 ◽  
Vol 366 ◽  
pp. 35-38 ◽  
Author(s):  
Yuantao Zhang ◽  
Xin Dong ◽  
Guoxing Li ◽  
Wancheng Li ◽  
Baolin Zhang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Two Dimensional ◽  
High Quality ◽  
Dimensional Growth

GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy

1993 ◽  
Vol 32 (Part 2, No. 6A) ◽  
pp. L755-L757 ◽  
Author(s):  
Xiong Zhang ◽  
Koichi Karaki ◽  
Hiroyuki Yaguchi ◽  
Kentaro Onabe ◽  
Yasuhiro Shiraki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Gaas Substrates
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