Low-temperature (≤600 °C) growth of high-quality In x Ga1− x N (x ∼ 0.3) by metalorganic vapor phase epitaxy using NH3 decomposition catalyst

2017 ◽  
Vol 56 (4) ◽  
pp. 041001
Author(s):  
Akio Yamamoto ◽  
Kazuki Kodama ◽  
Takashi Matsuoka ◽  
Masaaki Kuzuhara
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Nh3 Decomposition

Direct Growth of High-Quality InP Layers on GaAs Substrates at Low Temperature by Metalorganic Vapor Phase Epitaxy

2003 ◽  
Vol 42 (Part 1, No. 8) ◽  
pp. 4913-4918 ◽  
Author(s):  
Chin-I Liao ◽  
Kao-Feng Yarn ◽  
Chien-Lien Lin ◽  
Yu-Lu Lin ◽  
Yeong-Her Wang
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Gaas Substrates ◽  
Direct Growth

RETRACTED: High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy

2013 ◽  
Vol 366 ◽  
pp. 35-38 ◽  
Author(s):  
Yuantao Zhang ◽  
Xin Dong ◽  
Guoxing Li ◽  
Wancheng Li ◽  
Baolin Zhang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Two Dimensional ◽  
High Quality ◽  
Dimensional Growth

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

Electrical Properties ofHg1-xCdxTeGrown by Low-Temperature Metalorganic Vapor Phase Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 12A) ◽  
pp. 6481-6485 ◽  
Author(s):  
Touati Ferid ◽  
Kazuhito Yasuda ◽  
Hiroki Hatano ◽  
Takayuki Maejima ◽  
Masaya Minamide ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Low temperature growth of (100) HgCdTe layers with DtBTe in metalorganic vapor phase epitaxy

1995 ◽  
Vol 24 (9) ◽  
pp. 1093-1097 ◽  
Author(s):  
K. Yasuda ◽  
H. Hatano ◽  
T. Ferid ◽  
K. Kawamoto ◽  
T. Maejima ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth

scholarly journals High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

AIP Advances ◽  
2012 ◽  
Vol 2 (4) ◽  
pp. 042154 ◽  
Author(s):  
Kazuo Uchida ◽  
Ken-ichi Yoshida ◽  
Dongyuan Zhang ◽  
Atsushi Koizumi ◽  
Shinji Nozaki
Keyword(s):  
Vapor Phase ◽  
Sapphire Substrate ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Single Crystalline
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