Effects of Growth Temperature on Electrical Properties of InP-based Pseudomorphic Resonant Tunneling Diodes with Ultrathin Barriers Grown by Molecular Beam Epitaxy

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3114-3119 ◽  
Author(s):  
Jiro Osaka ◽  
Hideaki Matsuzaki
Keyword(s):  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Growth Temperature ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Resonant Tunneling Diodes in Si/CaF 2 Heterostructures Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 2, No. 8B) ◽  
pp. L920-L922 ◽  
Author(s):  
Masafumi Tsutsui ◽  
Masahiro Watanabe ◽  
Masahiro Asada
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

2002 ◽  
Vol 81 (9) ◽  
pp. 1729-1731 ◽  
Author(s):  
Akihiko Kikuchi ◽  
Ryo Bannai ◽  
Katsumi Kishino ◽  
Chia-Ming Lee ◽  
Jen-Inn Chyi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Resonant Tunneling Diodes ◽  
Double Barrier ◽  
Tunneling Diodes ◽  
Double Barrier Resonant Tunneling

CaF2/Fe3Si/CaF2Ferromagnetic Resonant Tunneling Diodes on Si(111) by Molecular Beam Epitaxy

2009 ◽  
Vol 2 ◽  
pp. 063006 ◽  
Author(s):  
Kenji Sadakuni ◽  
Teddy Harianto ◽  
Hiro Akinaga ◽  
Takashi Suemasu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes
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