scholarly journals Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]

2003 ◽  
Vol 83 (17) ◽  
pp. 3626-3627 ◽  
Author(s):  
A. E. Belyaev ◽  
C. T. Foxon ◽  
S. V. Novikov ◽  
O. Makarovsky ◽  
L. Eaves ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Resonant Tunneling Diodes ◽  
Double Barrier ◽  
Tunneling Diodes ◽  
Double Barrier Resonant Tunneling

AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy

2002 ◽  
Vol 81 (9) ◽  
pp. 1729-1731 ◽  
Author(s):  
Akihiko Kikuchi ◽  
Ryo Bannai ◽  
Katsumi Kishino ◽  
Chia-Ming Lee ◽  
Jen-Inn Chyi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Rf Plasma ◽  
Resonant Tunneling Diodes ◽  
Double Barrier ◽  
Tunneling Diodes ◽  
Double Barrier Resonant Tunneling

Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodes

1992 ◽  
Vol 45 (24) ◽  
pp. 14407-14410 ◽  
Author(s):  
M. Tewordt ◽  
L. Marti´n-Moreno ◽  
J. T. Nicholls ◽  
M. Pepper ◽  
M. J. Kelly ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Electron Tunneling ◽  
Single Electron ◽  
Resonant Tunneling Diodes ◽  
Double Barrier ◽  
Tunneling Diodes ◽  
Single Electron Tunneling ◽  
Double Barrier Resonant Tunneling
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