Response to “Comment on ‘AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy’ ” [Appl. Phys. Lett. 83, 3626 (2003)]
2017 ◽
Vol 35
(2)
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pp. 02B110
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Keyword(s):
1992 ◽
Vol 10
(2)
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pp. 1045
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1996 ◽
pp. 269-290
1992 ◽
Vol 45
(24)
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pp. 14407-14410
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2010 ◽
Vol 57
(12)
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pp. 3265-3274
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