Two-Dimensional Growth of AlN and GaN on Lattice-Relaxed Al0.4Ga0.6N Buffer Layers Prepared with High-Temperature-Grown AlN Buffer on Sapphire Substrates and Fabrication of Multiple-Quantum-Well Structures

2001 ◽  
Vol 40 (Part 2, No. 12A) ◽  
pp. L1293-L1296 ◽  
Author(s):  
Yasuo Ohba ◽  
Rie Sato ◽  
Kei Kaneko
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Buffer Layers ◽  
Multiple Quantum ◽  
Two Dimensional ◽  
Quantum Well Structures ◽  
Sapphire Substrates ◽  
Dimensional Growth ◽  
Aln Buffer

Optical Properties of InGaN/GaN Multiple Quantum Well Structures Grown on GaN and Sapphire Substrates

2020 ◽  
Vol 67 (6) ◽  
pp. 974-977
Author(s):  
Vitezslav Jary ◽  
Alice Hospodkova ◽  
Tomas Hubacek ◽  
Frantisek Hajek ◽  
Karel Blazek ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Sapphire Substrates

Quantum confinement in two dimensional layers of PbSe/ZnSe multiple quantum well structures

2013 ◽  
Vol 102 (24) ◽  
pp. 242110 ◽  
Author(s):  
V. Arivazhagan ◽  
M. Manonmani Parvathi ◽  
S. Rajesh ◽  
Ragnhild Sæterli ◽  
Randi Holmestad
Keyword(s):  
Quantum Well ◽  
Quantum Confinement ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Two Dimensional ◽  
Quantum Well Structures
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