Gas Source Molecular Beam Epitaxy Growth of TlInGaAs Layers on GaAs Substrates

Gas Source ◽

Gas-Source Molecular Beam Epitaxy Growth of Metamorphic InP/In0.5Al0.5As/In0.5Ga0.5As/InAsP High-Electron-Mobility Structures on GaAs Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.1004 ◽

2002 ◽

Vol 41 (Part 1, No. 2B) ◽

pp. 1004-1007 ◽

Cited By ~ 14

Author(s):

Kiyoshi Ouchi ◽

Tomoyoshi Mishima ◽

Makoto Kudo ◽

Hiroshi Ohta

Keyword(s):

Molecular Beam Epitaxy ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron ◽

High Electron Mobility ◽

Gas Source ◽

Gas‐source molecular beam epitaxy growth of GaxIn1−xAsyP1−ylattice matched to GaAs

10.1063/1.109802 ◽

1993 ◽

Vol 63 (8) ◽

pp. 1128-1130 ◽

Cited By ~ 12

Author(s):

G. Zhang

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Gas source molecular beam epitaxy growth of GaAs/InGaP superlattice as optical confinement layers in 0.98 μm InGaAs/InGaP strained quantum well lasers

Journal of Crystal Growth ◽

10.1016/0022-0248(95)80157-8 ◽

1995 ◽

Vol 150 ◽

pp. 1344-1349 ◽

Cited By ~ 8

Author(s):

M. Usami ◽

Y. Matsushima ◽

Y. Takahashi

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Optical Confinement ◽

Gas Source ◽

Strained Quantum Well

Gas-source molecular beam epitaxy growth of an 8.5 μm quantum cascade laser

10.1063/1.119338 ◽

1997 ◽

Vol 71 (18) ◽

pp. 2593-2595 ◽

Cited By ~ 37

Author(s):

S. Slivken ◽

C. Jelen ◽

A. Rybaltowski ◽

J. Diaz ◽

M. Razeghi

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Cascade Laser ◽

Molecular Beam ◽

Quantum Cascade ◽

Temperature-modulated Si(001):As gas-source molecular beam epitaxy: Growth kinetics and As incorporation

10.1063/1.1415420 ◽

2001 ◽

Vol 79 (20) ◽

pp. 3263-3265 ◽

Cited By ~ 2

Author(s):

H. Kim ◽

G. Glass ◽

J. A. N. T. Soares ◽

Y. L. Foo ◽

P. Desjardins ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Growth Kinetics ◽

Molecular Beam ◽

Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.3810 ◽

1997 ◽

Vol 36 (Part 1, No. 6B) ◽

pp. 3810-3813 ◽

Cited By ~ 13

Author(s):

Reiko Kuroiwa ◽

Hajime Asahi ◽

Kakuya Iwata ◽

Seong-Jin Kim ◽

Joo-Hyong Noh ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Scanning Tunneling Microscopy ◽

Molecular Beam ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Gas Source ◽

Rich Side

Molecular beam epitaxy growth of InP layers on GaAs substrates using GaP decomposition source

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)00694-7 ◽

2001 ◽

Vol 227-228 ◽

pp. 260-265 ◽

Cited By ~ 1

Author(s):

Ratanathammaphan Somchai ◽

Supachok Thainoi ◽

Pornchai Changmoang ◽

Suwat Sopitpan ◽

Choompol Antarasena

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions

Journal of Applied Physics ◽

10.1063/1.369481 ◽

1999 ◽

Vol 85 (1) ◽

pp. 501-511 ◽

Cited By ~ 11

Author(s):

N. Taylor ◽

H. Kim ◽

T. Spila ◽

J. A. Eades ◽

G. Glass ◽

...

Keyword(s):

Phase Transitions ◽

Molecular Beam Epitaxy ◽

Growth Kinetics ◽

Molecular Beam ◽

Surface Phase ◽

Gas Source ◽

Surface Phase Transitions

Si(011)16×2 gas-source molecular beam epitaxy: Growth kinetics

10.1063/1.126495 ◽

2000 ◽

Vol 76 (20) ◽

pp. 2853-2855 ◽

Cited By ~ 7

Author(s):

N. Taylor ◽

H. Kim ◽

P. Desjardins ◽

Y. L. Foo ◽

J. E. Greene

Keyword(s):

Molecular Beam Epitaxy ◽

Growth Kinetics ◽

Molecular Beam ◽

Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates

Semiconductor Science and Technology ◽

10.1088/0268-1242/7/3/010 ◽

1992 ◽

Vol 7 (3) ◽

pp. 337-343 ◽

Cited By ~ 56

Author(s):

J R Soderstrom ◽

M M Cumming ◽

J -Y Yao ◽

T G Andersson

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽