Gas source molecular beam epitaxy growth of GaAs/InGaP superlattice as optical confinement layers in 0.98 μm InGaAs/InGaP strained quantum well lasers

1995 ◽  
Vol 150 ◽  
pp. 1344-1349 ◽  
Author(s):  
M. Usami ◽  
Y. Matsushima ◽  
Y. Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Optical Confinement ◽  
Gas Source ◽  
Strained Quantum Well

600-nm-Range GaInP/AlInP Strained Quantum Well Lasers Grown by Gas Source Molecular Beam Epitaxy

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 804-810 ◽  
Author(s):  
Ichirou Nomura ◽  
Katsumi Kishino ◽  
Akihiko Kikuchi ◽  
Yawara Kaneko
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Strained Quantum Well ◽  
Nm Range

High performance InGaAsP/InP semiconductor quantum well lasers realized by gas source molecular beam epitaxy

1992 ◽  
Vol 2 (9) ◽  
pp. 1727-1738 ◽  
Author(s):  
A. Accard ◽  
F. Brillouet ◽  
E. Duda ◽  
B. Fernier ◽  
G. Gelly ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
High Performance ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source ◽  
Semiconductor Quantum Well

Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps

1991 ◽  
Vol 59 (23) ◽  
pp. 2929-2931 ◽  
Author(s):  
Y. K. Chen ◽  
M. C. Wu ◽  
J. M. Kuo ◽  
M. A. Chin ◽  
A. M. Sergent
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Gas Source

Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

2004 ◽  
Vol 96 (1) ◽  
pp. 44-48 ◽  
Author(s):  
Takeo Kageyama ◽  
Tomoyuki Miyamoto ◽  
Masataka Ohta ◽  
Tetsuya Matsuura ◽  
Yasutaka Matsui ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Surfactant Effect ◽  
Strained Quantum Well ◽  
Highly Strained ◽  
Nm Range

All solid source molecular beam epitaxy growth of strained‐layer InGaAs/GaInAsP/GaInP quantum well lasers (λ=980 nm)

1995 ◽  
Vol 67 (16) ◽  
pp. 2332-2334 ◽  
Author(s):  
Mika Toivonen ◽  
Marko Jalonen ◽  
Arto Salokatve ◽  
Jari Näppi ◽  
Pekka Savolainen ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Quantum Well Lasers ◽  
Molecular Beam Epitaxy Growth ◽  
Strained Layer
Sign in / Sign up

Export Citation Format

Share Document