Growth of Si1−xGex(011) on Si(011)16×2 by gas-source molecular beam epitaxy: Growth kinetics, Ge incorporation, and surface phase transitions
Keyword(s):
Keyword(s):
2020 ◽
Vol 32
(47)
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pp. 475002
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Keyword(s):
1995 ◽
Vol 150
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pp. 1344-1349
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1997 ◽
Vol 392
(1-3)
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pp. L63-L68
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Keyword(s):
1997 ◽
Vol 36
(Part 1, No. 6B)
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pp. 3810-3813
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