Microstructure and Electrical Properties of Tungsten-Doped Bismuth Titanate Ceramics

2004 ◽  
Vol 43 (11A) ◽  
pp. 7613-7617 ◽  
Author(s):  
Lina Zhang ◽  
Suchuan Zhao ◽  
Hanfeng Yu ◽  
Liaoying Zheng ◽  
Guorong Li ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Bismuth Titanate ◽  
Titanate Ceramics

Substitutional effect of bismuth ferrite on the electrical properties of sodium bismuth titanate ceramics

2015 ◽  
Vol 27 (1) ◽  
pp. 407-413 ◽  
Author(s):  
D. E. Jain Ruth ◽  
S. M. Abdul Kader ◽  
M. Muneeswaran ◽  
N. V. Giridharan ◽  
D. Pathinettam Padiyan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Bismuth Titanate ◽  
Bismuth Ferrite ◽  
Sodium Bismuth Titanate ◽  
Titanate Ceramics ◽  
Substitutional Effect

Effect of Tb Substitution on Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics

2008 ◽  
Vol 368-372 ◽  
pp. 95-97
Author(s):  
Min Chen ◽  
W.K. An ◽  
A.H. Cai ◽  
Chong Qing Huang ◽  
K.L. Su ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Coercive Field ◽  
Perovskite Structure ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Layered Perovskite ◽  
Electrical Characteristics ◽  
Sem Micrographs ◽  
Layered Perovskite Structure ◽  
Titanate Ceramics

The electrical properties and Microstructures of Tb-doped bismuth titanate (Bi3.3Tb0.6Ti3O12) ceramic were investigated. XRD analyses revealed that the sample had Bi-layered perovskite structure. SEM micrographs showed randomly oriented and plate-like morphology. The remanent polarization (Pr) and coercive field (Ec) of Bi3.3Tb0.6Ti3O12 ceramic are above 25 μC/cm2 and 80 KV/cm, respectively.

Enhanced electrical properties in Rb-substituted sodium bismuth titanate ceramics

2016 ◽  
Vol 122 (5) ◽  
Author(s):  
D. E. Jain Ruth ◽  
M. Muneeswaran ◽  
N. V. Giridharan ◽  
B. Sundarakannan
Keyword(s):  
Electrical Properties ◽  
Bismuth Titanate ◽  
Sodium Bismuth Titanate ◽  
Titanate Ceramics

Control of the ferroelectric and electrical properties of Nd substituted bismuth titanate ceramics

2007 ◽  
Vol 21 (1-4) ◽  
pp. 633-636 ◽  
Author(s):  
Jin Soo Kim ◽  
Sun Young Lee ◽  
Hai Joon Lee ◽  
Chang Won Ahn ◽  
Ill Won Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Bismuth Titanate ◽  
Titanate Ceramics

Electrical properties of niobium doped barium bismuth-titanate ceramics

2012 ◽  
Vol 47 (8) ◽  
pp. 1874-1880 ◽  
Author(s):  
J.D. Bobić ◽  
M.M. Vijatović Petrović ◽  
J. Banys ◽  
B.D. Stojanović
Keyword(s):  
Electrical Properties ◽  
Bismuth Titanate ◽  
Niobium Doped ◽  
Titanate Ceramics ◽  
Barium Bismuth

scholarly journals Grain orientation and electrical properties of hot-pressed bismuth titanate ceramics.

1984 ◽  
Vol 92 (1067) ◽  
pp. 416-419 ◽  
Author(s):  
Yoshiki INOUE ◽  
Toshio KIMURA ◽  
Takashi YAMAGUCHI ◽  
Kunihiro NAGATA ◽  
Kiyoshi OKAZAKI
Keyword(s):  
Electrical Properties ◽  
Grain Orientation ◽  
Bismuth Titanate ◽  
Titanate Ceramics

scholarly journals Electrical characteristics of bismuth titanate glass-ceramics containing SiO2 and Nd2O3

2010 ◽  
Vol 4 (1) ◽  
pp. 39-43 ◽  
Author(s):  
Stanislav Slavov ◽  
Milena Krapchanska ◽  
Elena Kashchieva ◽  
Yanko Dimitriev
Keyword(s):  
Electrical Properties ◽  
Glass Formation ◽  
Bismuth Titanate ◽  
Glass Ceramics ◽  
Sio2 Content ◽  
Electrical Characteristics ◽  
Frequency Range ◽  
Impedance Analyzer ◽  
Methods Of Synthesis ◽  
Titanate Ceramics

Bismuth-titanate ceramics containing SiO2 and Nd2O3 as additives are synthesized at two different ways of cooling of the melts. The introduction of SiO2 and Nd2O3 leads to more complex crystallization with participation of several phases including Bi4Ti3O12. It is proved that the applied methods of synthesis are suitable for generation of different microstructures in the bulk doped bismuth titanate ceramics, which is promising basis for modification of their electrical properties. The increasing of SiO2 content improves the glass formation ability and addition of Nd2O3 stimulates the crystallization. The conductivity of selected samples is determined by impedance analyzer in the frequency range from 10 to 100 kHz and DC resistible bridge using two-terminal method. All investigated samples are dielectrics with conductivity 10-6-10-9 (??cm)-1.

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