Design and Preparation of AlN/GaN Quantum Wells for Quantum Cascade Laser Applications

2005 ◽  
Vol 44 (8) ◽  
pp. 5918-5922 ◽  
Author(s):  
Akihiro Ishida ◽  
Kazuma Matsue ◽  
Yoku Inoue ◽  
Hiroshi Fujiyasu ◽  
Hang-Ju Ko ◽  
...  
2018 ◽  
Vol 33 (5) ◽  
pp. 055005 ◽  
Author(s):  
Ilkay Demir ◽  
Ismail Altuntas ◽  
Baris Bulut ◽  
Maher Ezzedini ◽  
Yuksel Ergun ◽  
...  

2004 ◽  
Vol 21 (2-4) ◽  
pp. 765-769 ◽  
Author(s):  
A Ishida ◽  
Y Inoue ◽  
H Nagasawa ◽  
N Sone ◽  
K Ishino ◽  
...  

2009 ◽  
Vol 1195 ◽  
Author(s):  
Michele Nobile ◽  
Gottfried Strasser ◽  
Hermann Detz ◽  
Elvis Mujagic ◽  
Aaron Andrews ◽  
...  

AbstractAn experimental study on mid-infrared intersubband absorption in InGaAs/GaAsSb multiple quantum wells grown lattice-matched to InP substrates by molecular beam epitaxy is presented. Intersubband absorption in a broad wavelength region (5.8 - 11.6 μm) is observed in multiple quantum well samples with well widths ranging between 4.5 and 12 nm. A conduction band offset at the InGaAs/GaAsSb heterointerface of 360 meV gives an excellent agreement between the theoretically calculated ISB transition energies and the Fourier-transform infrared spectroscopy measurements over the whole range of well widths under investigation. Two kinds of intersubband devices based on the InGaAs/GaAsSb material system are presented: a quantum well infrared photodetector operating at a wavelength of 5.6μm and an aluminum-free quantum cascade laser. The presented quantum cascade laser emits at a wavelength of 11.3 μm, with a threshold current density of 1.7 kA/cm2 at 78 K.


2019 ◽  
Vol 93 (1) ◽  
pp. 63-66
Author(s):  
Chiara Ciano ◽  
Luciana Di Gaspare ◽  
Michele Montanari ◽  
Luca Persichetti ◽  
Leonetta Baldassarre ◽  
...  

2009 ◽  
Vol 24 (2) ◽  
pp. 75-81 ◽  
Author(s):  
Jelena Radovanovic ◽  
Vitomir Milanovic

In this paper we consider the structural parameter optimization of the active region of a GaAs-based quantum cascade laser in order to maximize the optical gain of the laser at the characteristic wavelengths, which are best suited for detection of pollutant gasses, such as SO2, HNO3, CH4, and NH3, in the ambient air by means of direct absorption. The procedure relies on applying elaborate tools for global optimization, such as the genetic algorithm. One of the important goals is to extend the applicability of a single active region design to the detection of several compounds absorbing at close wave-lengths, and this is achieved by introducing a strong external magnetic field perpendicularly to the epitaxial layers. The field causes two-dimensional continuous energy subbands to split into the series of discrete Landau levels. Since the arrangement of Landau levels depends strongly on the magnitude of the magnetic field, this enables one to control the population inversion in the active region, and hence the optical gain. Furthermore, strong effects of band non-parabolicity result in subtle changes of the lasing wavelength at magnetic fields which maximize the gain, thus providing a path for fine-tuning of the output radiation properties and changing the target compound for detection. The numerical results are presented for quantum cascade laser structures designed to emit at specified wavelengths in the mid-infrared part of the spectrum.


Author(s):  
Peter Friedli ◽  
Valeria Liverini ◽  
Andreas Hugi ◽  
Philippe Lerch ◽  
Jerome Faist ◽  
...  

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 437 ◽  
Author(s):  
Ayushi Rajeev ◽  
Weixin Chen ◽  
Jeremy Kirch ◽  
Susan Babcock ◽  
Thomas Kuech ◽  
...  

Quantum wells and barriers with precise thicknesses and abrupt composition changes at their interfaces are critical for obtaining the desired emission wavelength from quantum cascade laser devices. High-resolution X-ray diffraction and transmission electron microscopy are commonly used to calibrate and characterize the layers’ thicknesses and compositions. A complementary technique, atom probe tomography, was employed here to obtain a direct measurement of the 3-dimensional spatially-resolved compositional profile in two InxGa1−xAs/InyAl1−yAs III-V strained-layer superlattice structures, both grown at 605 °C. Fitting the measured composition profiles to solutions to Fick’s Second Law yielded an average interdiffusion coefficient of 3.5 × 10−23 m2 s−1 at 605 °C. The extent of interdiffusion into each layer determined for these specific superlattices was 0.55 nm on average. The results suggest that quaternary active layers will form, rather than the intended ternary compounds, in structures with thicknesses and growth protocols that are typically designed for quantum cascade laser devices.


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