An Inverter-Based Wideband Low-Noise Amplifier in 40 nm Complementary Metal Oxide Semiconductor

2012 ◽  
Vol 51 ◽  
pp. 04DE07 ◽  
Author(s):  
Dayang Nur Salmi Dharmiza ◽  
Mototada Oturu ◽  
Satoru Tanoi ◽  
Hiroyuki Ito ◽  
Noboru Ishihara ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Low Noise ◽  
Metal Oxide Semiconductor ◽  
Low Noise Amplifier ◽  
Oxide Semiconductor ◽  
Noise Amplifier

scholarly journals On the Use of 6th-Order Tunable Complementary Metal-Oxide-Semiconductor Varactor based Filter in Ultra-Wideband Low Noise Amplifier

2018 ◽  
Vol 12 (1) ◽  
pp. 21-33
Author(s):  
Farooq Khaleel ◽  
M. Nadhim Abbas
Keyword(s):  
Metal Oxide ◽  
Frequency Spectrum ◽  
Complementary Metal Oxide Semiconductor ◽  
Low Noise ◽  
Metal Oxide Semiconductor ◽  
Low Noise Amplifier ◽  
Ultra Wideband ◽  
Oxide Semiconductor ◽  
Frequency Spacing ◽  
Noise Amplifier

Background:The plethora of the emerged radio frequency applications makes the frequency spectrum crowded by many applications and hence the ability to detect specific application’s frequency without distortion is a difficult task to achieve.Objective:The goal is to achieve a method to mitigate the highest interferer power in the frequency spectrum in order to eliminate the distortion.Method:This paper presents the application of the proposed tunable 6th-order notch filter on Ultra-Wideband (UWB) Complementary Metal-Oxide-Semiconductor (CMOS) Low Noise Amplifier (LNA) utilising self-forward body bias (SFBB).Results:The proposed filter presents 23.5dBm minimum interferer rejection (IR) and attenuates the interferer signal from -43dBm to -67dBm at frequency 5.17GHz. In addition, the maximum IR is 40dBm and attenuates the interferer signal from -41dBm to -81dBm at frequency 5.785GHz. The proposed filter provides coarse tuning with frequency spacing (10MHz) and soft tuning with frequency spacing (1MHz). The UWB CMOS LNA consumes only 5.22mW from a supply voltage of 1.2V and presents a maximum gain of 14dB at frequency 6.25GHz in the -3dB bandwidth from 4.75GHz to 7.5GHz. In addition, the average noise figure is 3.1dB and the input insertion losses (S11) is less than -12dB along the designed bandwidth. The simulation is performed in Advanced Design System (ADS2016.01) software utilising 180nm Taiwan Semiconductor Manufacturing Company (TSMC) Berkeley Short-channel Insulated Gate Field Effect Model (BSIM3v3) model files.Conclusion:The proposed method achieves high interferer power rejection with both soft and coarse tuning.

An Inverter-Based Wideband Low-Noise Amplifier in 40 nm Complementary Metal Oxide Semiconductor

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DE07 ◽  
Author(s):  
Dayang Nur Salmi Dharmiza ◽  
Mototada Oturu ◽  
Satoru Tanoi ◽  
Hiroyuki Ito ◽  
Noboru Ishihara ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Complementary Metal Oxide Semiconductor ◽  
Low Noise ◽  
Metal Oxide Semiconductor ◽  
Low Noise Amplifier ◽  
Oxide Semiconductor ◽  
Noise Amplifier
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